Electron and hole drift mobility measurements on thin film CdTe solar cells

Long, Qi; Dinca, Steluta; Schiff, E. A.; Yu, Ming; Theil, Jeremy A.

doi:10.1063/1.4891846

Cited by 34 publications

(17 citation statements)

References 30 publications

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“…We attribute this difference to the grain boundary scattering in the alloying of CdTe and CdS films. However, our mobility value is much higher than the reported electron drift mobility ranging from 0.1 -1 cm 2 /V•s measured from polycrystalline CdTe/CdS solar cells [75].…”

Section: (H) Hall Mobility Of Cds Film and Cdte/cds Filmcontrasting

confidence: 70%

Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate

Yang

Seewald

Mohanty

et al. 2017

Applied Surface Science

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Single crystal CdTe films are desirable for optoelectronic device applications. An important strategy of creating films with high crystallinity is through epitaxial growth on a proper single crystal substrate. We report the metalorganic chemical vapor deposition of epitaxial CdTe films on the CdS/mica substrate. The epitaxial CdS film was grown on a mica surface by thermal evaporation. Due to the weak van der Waals forces, epitaxy is achieved despite the very large interface lattice mismatch between CdS and mica (~21-55%). The surface morphology of mica, CdS and CdTe were quantified by atomic force microscopy. The near surface structures, orientations and texture of CdTe and CdS films were characterized by the unique reflection highenergy electron diffraction surface pole figure technique. The interfaces of CdTe and CdS films and mica were characterized by X-ray pole figure technique and transmission electron microscopy. The out-of-plane and in-plane epitaxy of the heteroepitaxial films stack are determined to be CdTe(111)//CdS(0001)//mica(001) and [1 � 21 � ] CdTe //[1100] CdS //[010] mica , respectively. The measured photoluminescence (PL), time resolved PL, photoresponse, and Hall mobility of the CdTe/CdS/mica indicate quality films. The use of van der Waals surface to grow epitaxial CdTe/CdS films offers an alternative strategy towards infrared imaging and solar cell applications.

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Section: (H) Hall Mobility Of Cds Film and Cdte/cds Filmcontrasting

confidence: 70%

Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate

Yang

Seewald

Mohanty

et al. 2017

Applied Surface Science

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“…Another reason for enhanced hysteresis effects in PSCs could be the experimentally reported high charge carrier mobilities. Literature shows comparatively high mobilities for charge carriers in perovskite materials [30], when compared to those values for poly-crystalline CdTe [31] and CIGS [32] thin films. All three thin film layers considered in this discussion; perovskite, CdTe and CIGS are poly-crystalline and usually show columnar growth.…”

Section: Discussionmentioning

confidence: 87%

Perovskite solar cells: short lifetime and hysteresis behaviour of current–voltage characteristics

Dharmadasa

Rahaq

Alam

2019

J Mater Sci: Mater Electron

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Perovskite solar cells have shown an impressive efficiency improvement over the past ~ 10 years achieving ~ 23% to date. However, the lifetime and instability of device characteristics are real issues to understand and solve before scaling up and commercialisation of these devices. Researchers have attempted to understand the hysteresis behaviour of current-voltage (I-V) curves in terms of mechanisms such as migration of several ions across the device and the effects of electronic defects during measurements. This review contributes to this scientific debate by presenting similar behaviour observed and reported for devices based on inorganic semiconductors. In established inorganic semiconductor thin film solar cells, both short lifetime and hysteresis have been observed, described and understood in terms of effects of numerous electronic defect levels. Therefore, the situation may be very similar and it is important to identify and reduce defects to remove this undesirable behaviour from perovskite solar cells. After considering the wealth of experimental results reported in the literature, the conclusion made is the dominating mechanism of I-V hysteresis is due to electronic defects available within the device structure. Suggestions have been made for potential researchers to experimentally investigate the phenomenon in order to finally put an end to this debate. As the defect levels and their concentrations are reduced, the initial efficiency, stability and the lifetime of perovskite solar cells should improve further, beyond the current situation.

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“…Although used for efficient solar cells, these films are not applicable for high-gain photoconductors since photocarriers in the flat band and low-barrier GB regions are subject to rapid recombination. This is due to a lack of driving field for carrier separation in the GIs and the overlap of the transport pathways of electrons and holes (holes can tunnel through GBs), which yield short carrier lifetimes (nanoseconds to microseconds) 18 19 .…”

Section: Resultsmentioning

confidence: 99%

Ultrasensitive photodetectors exploiting electrostatic trapping and percolation transport

et al. 2016

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The sensitivity of semiconductor photodetectors is limited by photocarrier recombination during the carrier transport process. We developed a new photoactive material that reduces recombination by physically separating hole and electron charge carriers. This material has a specific detectivity (the ability to detect small signals) of 5 × 1017 Jones, the highest reported in visible and infrared detectors at room temperature, and 4–5 orders of magnitude higher than that of commercial single-crystal silicon detectors. The material was fabricated by sintering chloride-capped CdTe nanocrystals into polycrystalline films, where Cl selectively segregates into grain boundaries acting as n-type dopants. Photogenerated electrons concentrate in and percolate along the grain boundaries—a network of energy valleys, while holes are confined in the grain interiors. This electrostatic field-assisted carrier separation and percolation mechanism enables an unprecedented photoconductive gain of 1010 e− per photon, and allows for effective control of the device response speed by active carrier quenching.

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Electron and hole drift mobility measurements on thin film CdTe solar cells

Cited by 34 publications

References 30 publications

Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate

Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate

Perovskite solar cells: short lifetime and hysteresis behaviour of current–voltage characteristics

Ultrasensitive photodetectors exploiting electrostatic trapping and percolation transport

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