Electron and hole transport layers optimization by numerical simulation of a perovskite solar cell

Azri, Faiza; Sengouga, Nouredine; Meftah, Afak

doi:10.1016/j.solener.2019.02.017

Cited by 361 publications

(162 citation statements)

References 18 publications

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“…The operating temperature is 300 K and the illumination spectrum is global AM 1.5. The material parameters of the device simulation are chosen from the literature [15][16][17][18][19][20][21][22], and summarized in table 1.…”

Section: Numerical Equationsmentioning

confidence: 99%

Simulation of the Sb₂Se₃ solar cell with a hole transport layer

Feng

2020

Mater. Res. Express

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A model of the Sb 2 Se 3 solar cell with a hole transport layer (HTL) has been investigated by solar cell capacitance simulator (SCAPS). The influence of different HTLs on device performance has been firstly analyzed, and CuO has been found to be the best HTL. Then, Sb 2 Se 3 thickness, CuO thickness, the doping concentration of CuO, the hole mobility of CuO, the defect density of Sb 2 Se 3 layer, the defect density at the CdS/Sb 2 Se 3 interface, and the work function of metal electrode on device performance have been systematically studied. The optimum thicknesses of Sb 2 Se 3 and CuO are 300 nm and 20 nm, respectively. To achieve ideal performance, the doping concentration of CuO should be more than 10 19 cm −3 , and its hole mobility should be over 1 cm 2 V −1 s −1 . The defect densities in the Sb 2 Se 3 layer and at the CdS/ Sb 2 Se 3 interface play a critical role on device performance, both of which should be as low as 10 13 cm −3 and 10 14 cm −2 , respectively. In addition, the work function of the metal electrode should be more than 4.8 eV to avoid formation of Schottky junction at the metal electrode interface. After optimization, a best efficiency of 23.18% can be achieved. Our simulation results provide valuable information to further improve the efficiency of Sb 2 Se 3 solar cells in practice.

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Section: Numerical Equationsmentioning

confidence: 99%

Simulation of the Sb₂Se₃ solar cell with a hole transport layer

Feng

2020

Mater. Res. Express

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“…Where, electrostatic potential is denoted by ψ, elementary charge is q, static relative permittivity of the medium is , density of ionized acceptors (donors) is ( ), hole(electron) density is p(n) and N def represents the density of possible defects (Donor or Acceptor) [14,15]. Continuity equation of hole and electron in steady-state are mentioned below as:…”

Section: mentioning

confidence: 99%

Perovskite Solar Cell design using Tin Halide and Cuprous Thiocyanate for Enhanced Efficiency

Sharma¹,

Mehra²

2019

IJEAT

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Utilization of Tin Halide as an absorber in Perovskite solar cells is immensely recognized as a substitute of lead halide absorber because of lead material’s toxicity. Also, Tin halide based Perovskites possess a potential for higher quantum efficiency because of their enhanced light absorption capability due to the wide-ranging absorption spectrum in the visible region with a comparatively lower bandgap of 1.3 eV than lead-based Perovskites. In the present work, glass/ transparent conductive oxide (TCO)/ titanium dioxide (buffer)/ tin halide Perovskite (Absorber)/ cuprous thiocyanate (HTM)/ Metal back solar cell structure has been designed and simulated by SCAPS software which yields Power Conversion Efficiency (PCE) of 28.32% and Fill Factor (FF) of 85.17%. The effect of total defect density, thickness, Valance Band Effective Density of States (VBEDS) and Conduction Band Effective Density of States (CBEDS) for an absorber layer has been analyzed. It has been observed that VBEDS variation has achieved PCE and FF to a significant extent i.e. up to 32.47% PCE and 85.86% FF

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“…[ 11 ], Azri et al. [ 12 ] and Salah et al. [ 5 ] simulated the influence of different ETM, hole transporting material (HTM), metal work function, temperature, and absorber thickness on the overall cell performance and predicted a PCE value of 21%, 25.02%, and 26.11%, respectively.…”

Section: Introductionmentioning

confidence: 99%

Impact of absorber layer thickness, defect density, and operating temperature on the performance of MAPbI3 solar cells based on ZnO electron transporting material

Ouslimane

Et-taya

Elmaimouni

et al. 2021

Heliyon

176

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Hybrid organic-inorganic perovskite solar cells (PSCs) are the novel fourth-generation solar cells, with impressive progress in the last few years. MAPbI 3 is a cost-effective material used as an absorber layer in PSCs. Due to the different diffusion length of carriers, the electron transporting material (ETM) plays a vital role in PSCs' performance. ZnO ETM is a promising candidate for low-cost and high-efficiency photovoltaic technology. In this work, the normal n-i-p planar heterojunction structure has been simulated using SCAPS-1D. The influence of various parameters such as the defect density, the thickness of the MAPbI 3 layer, the temperature on fill factor, the open-circuit voltage, the short circuit current density, and the power conversion efficiency are investigated and discussed in detail. We found that a 21.42% efficiency can be obtained under a thickness of around 0.5 μm, and a total defect of 10 13 cm −3 at ambient temperature. These simulation results will help fabricate low-cost, high-efficiency, and low-temperature PSCs.

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Electron and hole transport layers optimization by numerical simulation of a perovskite solar cell

Cited by 361 publications

References 18 publications

Simulation of the Sb₂Se₃ solar cell with a hole transport layer

Simulation of the Sb₂Se₃ solar cell with a hole transport layer

Perovskite Solar Cell design using Tin Halide and Cuprous Thiocyanate for Enhanced Efficiency

Impact of absorber layer thickness, defect density, and operating temperature on the performance of MAPbI3 solar cells based on ZnO electron transporting material

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Electron and hole transport layers optimization by numerical simulation of a perovskite solar cell

Cited by 361 publications

References 18 publications

Simulation of the Sb2Se3 solar cell with a hole transport layer

Simulation of the Sb2Se3 solar cell with a hole transport layer

Perovskite Solar Cell design using Tin Halide and Cuprous Thiocyanate for Enhanced Efficiency

Impact of absorber layer thickness, defect density, and operating temperature on the performance of MAPbI3 solar cells based on ZnO electron transporting material

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Product

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Simulation of the Sb₂Se₃ solar cell with a hole transport layer

Simulation of the Sb₂Se₃ solar cell with a hole transport layer