Positive ion fluxes, mean ion energies and ion energy distribution functions in low pressure CF 4 /Ar plasmas have been measured. The experiments were conducted in a Gaseous Electronics Conference cell using an inductively coupled plasma device powered by a 13.56 MHz radiofrequency (rf) power source. The measurements were made at 200 and 300 W of input rf power and at 10, 20, 30 and 50 mTorr gas pressures for three gas mixtures: (i) 20% CF 4 : 80% Ar, (ii) 50% CF 4 : 50% Ar and (iii) 80% CF 4 : 20% Ar. A Langmuir probe was also used to measure plasma parameters such as n e , n + i and electron energy distribution functions (EEDF) which were subsequently used to reconcile the mass spectrometer data. CF + 3 is the most dominant fluorocarbon ion product of the plasma, followed by CF + 2 and CF + . Ar + is also detected in significant amounts with its relative flux increasing with the increase in Ar content in the gas mixture. Significant amounts of etch products, SiF +x /COF + x (x = 0-3), of the quartz window were also detected. The fluorocarbon ions are produced by direct electron impact and by ion-molecule reactions between Ar + and CF 4 as well as between CF + 3 and CF 4 . However, the concentrations of CF + 2 and CF + are much larger than that which can be possibly produced from these two processes. The available cross-section data suggest that the direct electron impact ionization of the fragment neutrals and negative ion production by electron attachment may be responsible for the increase in the concentrations of the minor ions. F − densities, estimated by using the measured EEDF and positive ion flux data and the available cross-section data, agree well with the published experimental data.