Electron Beam Lithography Using Highly Sensitive Negative Type of Plant-Based Resist Material Derived from Biomass on Hardmask Layer

Abstract

We investigated electron beam (EB) lithography using a novel highly sensitive negative type of plant-based resist material derived from biomass on a hardmask layer for trilayer processes. The chemical design concept for using the plant-based resist material with glucose and dextrin derivatives was first demonstrated in the EB lithography. The 1 µm line patterning images with highly efficient crosslinking properties and low film thickness shrinkage were provided under specific process conditions of EB lithography. The results shown reveal that the alpha-linked disaccharide formed by a 1,1-glucoside bond between two glucose units in dextrin derivatives was an important factor in controlling the highly sensitive EB patterning and developer properties.

Development of Cellulose Derivative Mold for Imprint Lithography

“…The thickness of the gas permeable molds was then remeasured. The dissolution rate was determined as the difference between the initial and final thickness of the gas permeable mold layers in the process of manufacturing the gas permeable molds and dipping in the volatile solvent [24][25][26][27]. Figure 6 shows the confocal microscope images of the line and space patterns of the imprinted material patterned by the gas permeable mold.…”

Sub-micron lines patterning into silica using water developable chitosan bioresist films for eco-friendly positive tone e-beam and UV lithography

“…Some researchers went further by replacing the current resists by biosourced polymers soluble in aqueous solutions. Takei et al used derivatives of polysaccharides as negative tone resist for electron beam (e-beam) lithography [6][7][8][9] or for extreme ultra-violet (EUV) lithography 9 whereas Kim et al tested silk as positive and negative tone resists for e-beam 10 or EUV lithography 11 . The polysaccharides of Takei et al were chemically modified with acryloyl groups.…”

Fifty nanometer lines patterned into silica using water developable chitosan bioresist and electron beam lithography

“…For a few years, biosourced polymers derived from biomass, which are nontoxic, renewable, and biodegradable natural materials, have been studied for water-developable high resolution lithography and have demonstrated their potential on commonly used pattern transfer techniques. [8][9][10][11][12][13][14] Through these studies, it was demonstrated that "green" e-beam lithography can be carried out in an organic-free process with high resolution. Kim et al 11 have produced 30 nm holes spaced of 100 nm with silk as a positive tone resist but did not transfer the features into the sublaying substrate.…”

“…Transfer of the features into the subjacent layer by CF 4 plasma etching was then realized. [8][9][10]16 However, due to the low selectivity of their saccharide layer to etching conditions, they did use a trilayer stack process: (1) saccharide based e-beam resist (200 nm), (2) a hard mask silicone-based polymer (50 nm), and (3) a thick polymer based etching transfer layer (800 nm). Although the process could be completely done in water, the polymers for the two last layers had to be synthesized.…”