Electron Conductivity Effective Mass Model for Strained-Ge

Yang, Wenyi; Song, Jiongjiong; Hu, Haiyang; Zhang, H. M.

doi:10.1166/jno.2018.2342

Cited by 3 publications

(1 citation statement)

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“…At present, the core components used in the rectifier circuit of microwave wireless energy transmission system are commonly used by Agilent's HSMS-282X, HSMS-285X, HSMS-281X, and HSMS-286X Ge-based Schottky diodes, which can cover low energy density to high energy density applications [6][7][8]. Compared with Ge semiconductor, strained Ge semiconductor on Si substrate (s-Ge/Si) has the advantages of compatibility with Si process, low cost, and high electron mobility [9][10][11][12]. It is an ideal replacement material for Ge semiconductor applications.…”

Section: Introductionmentioning

confidence: 99%

Design of Strained Ge Schottky Diode on Si Substrate for Microwave Rectifier Circuit

Liu

Song

et al. 2020

Advances in Condensed Matter Physics

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In recent years, wireless energy transmission technology has developed rapidly and has received increasing attention in the industry. For microwave wireless energy transfer system applications, Ge Schottky diodes as the core components of the rectifier circuit are commonly used. Compared with Ge semiconductor, strained Ge semiconductor on Si substrate has the advantages of compatibility with Si process, low cost, and high electron mobility. It is an ideal replacement material for Ge semiconductor applications. In view of this, based on the model of the relationship between the performance of strained Ge semiconductor on Si substrate Schottky diodes and the geometric parameters of the device and the physical parameters of the material, Silvaco TCAD and ADS simulation software are jointly used to propose a novel strained Ge semiconductor on Si substrate Schottky diode for microwave rectification circuit. Simulation results show that the strained Ge semiconductor on Si substrate Schottky diode has a rectification efficiency of 70.1% when the input of the rectifier circuit is 20 dBm, the load resistance is R = 1000 Ω, and the load capacitance is C = 100 pF. Compared with traditional Ge Schottky diodes, this optimal operating point is closer to a low energy density, which is beneficial to a wide range of energy absorption. Studies have shown the feasibility of replacing Ge Schottky diodes. The research in this paper can provide valuable reference for the design and development of the core components of the rectifier circuit of the microwave infinite energy transmission system.

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Section: Introductionmentioning

confidence: 99%

Design of Strained Ge Schottky Diode on Si Substrate for Microwave Rectifier Circuit

Liu

Song

et al. 2020

Advances in Condensed Matter Physics

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High rectification efficiency direct bandgap Ge1−xSnx Schottky diode for microwave wireless power transfer

Song

Zhao

et al. 2019

Appl. Phys. A

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A Ge-based Schottky diode for 2.45 G weak energy microwave wireless energy transmission based on crystal orientation optimization and Sn alloying technology

Song¹,

Long-Qiang²,

Lei³

et al. 2021

Acta Phys. Sin.

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With the development of modern communication technology, unlimited energy harvesting technology has become more and more popular. Among them, the weak energy density wireless energy harvesting technology has broken through the limitations in traditional transmission lines and can use the “waste” energy in the environment, which has become very popular. The Schottky diode is the core device of the 2.45 G weak energy density wireless energy harvesting system, and its performance determines the upper limit of the system's rectification efficiency. From the material design point of view, using crystal orientation optimization technology and Sn alloying technology, we propose and design a Ge-based compound semiconductor with large effective mass, large affinity, and high electron mobility. On this basis, the device simulation tool is further used to set reasonable device material physical parameters and geometric structure parameters, and a Ge-based Schottky diode for 2.45 G weak energy microwave wireless energy transmission is realized. The simulation of the ADS rectifier circuit based on the SPICE model of the device shows that comparing with the conventional Schottky diode, the turn-on voltage of the device is reduced by about 0.1 V, the zero-bias capacitance is reduced by 6 fF, and the reverse saturation current is also significantly increased. At the same time, the designed new Ge-based Schottky diode is used as the core rectifier device to simulate the rectifier circuit. The results show that the new-style Ge-based Schottky diode is in the weak energy working area with input energy in a range of –10 — –20 dBm. The energy conversion efficiency is increased by about 10%. The technical solutions and relevant conclusions of this article can provide a useful reference for solving the problem of low rectification efficiency of the 2.45 G weak energy density wireless energy harvesting system.

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Electron Conductivity Effective Mass Model for Strained-Ge

Cited by 3 publications

References 0 publications

Design of Strained Ge Schottky Diode on Si Substrate for Microwave Rectifier Circuit

Design of Strained Ge Schottky Diode on Si Substrate for Microwave Rectifier Circuit

High rectification efficiency direct bandgap Ge1−xSnx Schottky diode for microwave wireless power transfer

A Ge-based Schottky diode for 2.45 G weak energy microwave wireless energy transmission based on crystal orientation optimization and Sn alloying technology

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