Electron-dipole resonance of impurity centres embedded in silicon microcavities

Bagraev, N. T.; Gehlhoff, W.; Bouravleuv, A. D.; Klyachkin, L. E.; Malyarenko, A. M.; Romanov, V. V.

doi:10.1016/j.physb.2003.09.184

Cited by 7 publications

(9 citation statements)

References 4 publications

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“…The NMC regime is revealed by the appearance of the absorption lines marked with arrows in Fig. 3, with the demonstration of the angular-dependent Rabi splitting [3][4][5]. The common origin of these lines related to the Fe-B center results from the same fine structure in both absorption and luminescence parts of the transmission spectrum seen in Fig.…”

Section: Resultsmentioning

confidence: 88%

“…6. The angular dependences of the luminescence part of the transmission spectrum that is enhanced in the range of Rabi splitting allow its identification as the ODMR spectrum from the trigonal Fe-B pair [3][4][5].…”

Section: Resultsmentioning

confidence: 99%

“…7b and 8b). This is because the EPR frequency is able to be selected from the THz range generated by the δ-barriers confining the Si-QW, being in self-agreement with the splitting of the triplet sublevels in the exchange field induced by the bound exciton [3][4][5]. Two different carbonhydrogen acceptor centers, C s -C i -H, have been identified by measuring the ODMR spectra [16].…”

Section: Figurementioning

confidence: 99%

“…The goal of the present work was to study the ODMR of single point defects inserted into the Si-QW in the absence of the external cavity resonator, as well as the hf source and recorder, by measuring the transmission (ODMR) spectra within the frameworks of the excitonic normal-mode coupling (NMC) with a single Si-QW inside a 1λ silicon mi-crocavity. This excitonic NMC regime appears to favour the giant triplet-singlet splitting caused by the exchange interaction of the impurity electron states with the s-p electronic states of the host Si-QW, which is revealed by the transmission spectra under the formation of the bound exciton at an impurity center [4,5].…”

Section: Introductionmentioning

confidence: 98%

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ODMR of single point defects in silicon nanostructures

Bagraev

Danilovsky

Gets

et al. 2012

Phys. Status Solidi C

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We present the findings of the optically detected magnetic resonance technique (ODMR), which reveal single point defects in the ultra‐narrow silicon quantum wells (Si‐QW) confined by the superconductor δ‐barriers. This technique allows the ODMR identification without application of an external cavity, as well as a high frequency source and recorder, and with measuring the transmission spectra within the frameworks of the excitonic normal‐mode coupling caused by the microcavities embedded in the Si‐QW plane. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Resultsmentioning

confidence: 88%

Section: Resultsmentioning

confidence: 99%

Section: Figurementioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

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ODMR of single point defects in silicon nanostructures

Bagraev

Danilovsky

Gets

et al. 2012

Phys. Status Solidi C

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“…The creation of the excited singlet states in the processes of the bipolaronic transport is also bound to be noticed, because owing to the transitions from the excited to the ground singlet state of the small hole bipolarons these 'sandwich' structures seem to be perspective as the sources and recorders of the THz and GHz emission that is revealed specifically in the electroluminescence and transmission spectra as a low frequency modulation (see Figures 3(a) and 3(c)). The optical detection of magnetic resonance of the single impurity centers in the Si-QW confined by the -barriers heavily doped with boron was especially performed by the direct measurements of the transmission spectra under such an internal GHz emission in the absence of the external cavity resonator [46,47]. Thus, the extremely low value of the hole effective mass in the 'sandwich' S-Si-QW-S structures seems to be the principal argument for the bipolaronic mechanism of high temperature superconductor properties that is based on the coherent tunneling of bipolarons [28,30].…”

Section: Superconductor Properties For -Barriersmentioning

confidence: 99%

Quantum Supercurrent Transistors in Silicon Quantum Wells Confined by Superconductor Barriers

Bagraev¹,

Danilovsky²,

Klyachkin³

et al. 2011

JMP

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We present the findings of spin-dependent single-hole and pair-hole transport in plane and across the p-type high mobility silicon quantum wells (Si-QW), 2 nm, confined by the superconductor δ-barriers on the n-type Si (100) surface. The oscillations of the conductance in normal state and the zero-resistance supercurrent in superconductor state as a function of the top gate voltage are found to be correlated by on-and off-resonance tuning the two-dimensional levels of holes in Si-QW with the Fermi energy in the superconductor δ-barriers. The SIMS and STM studies have shown that the δ-barriers heavily doped with boron, 5 × 10 21 cm -3 , represent really alternating arrays of silicon empty and doped dots, with dimensions restricted to 2 nm. This concentration of boron seems to indicate that each doped dot located between empty dots contains two impurity atoms of boron. The EPR studies show that these boron pairs are the trigonal dipole centres, B + -B -, that contain the pairs of holes, which result from the negative -U reconstruction of the shallow boron acceptors, 2B 0 => B + -B -. The electrical resistivity, magnetic susceptibility and specific heat measurements demonstrate that the high density of holes in the Si-QW (> 10 11 cm -2 ) gives rise to the high temperature superconductor properties for the δ-barriers. The value of the superconductor energy gap obtained is in a good agreement with the data derived from the oscillations of the conductance in normal state and of the zero-resistance supercurrent in superconductor state as a function of the bias voltage. These oscillations appear to be correlated by on-and off-resonance tuning the two-dimensional subbands of holes with the Fermi energy in the superconductor δ-barriers. Finally, the proximity effect in the S-Si-QW-S structure is revealed by the findings of the quantization of the supercurrent and the multiple Andreev reflection (MAR) observed both across and along the Si-QW plane thereby identifying the spin transistor effect.

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