Electron emission from a laser ablated and laser annealed BN thin film emitter

Abstract

Electron emission from a ∼100-nm-thick, laser ablated and laser annealed, carbon-doped BN film deposited on polycrystalline diamond was measured at room temperature and at pressures of about 1×10−8 Torr. For a 500-μm-diam extraction electrode, currents of several mA were obtained which corresponds to current densities of >1 A/cm2. At low currents, the current–voltage characteristics follow the classical Fowler–Nordheim behavior. At higher currents, deviations occur which are correlated to a nonlinear BN film resistance which ranges from 3×106 Ω to 5×104 Ω. For comparison, similar measurements were performed for the polycrystalline diamond film. Current densities of only 1 mA/cm2 were obtained which is attributed to a much higher sample resistance of about 1×109 Ω.

Field emission characteristics of boron nitride films deposited on Si substrates with cubic boron nitride crystal grains

“…4 An influence of the series resistance of BN films on field emission characteristics was investigated. 5 It was also demonstrated that BN field emitters had a potentiality of high emission current operation. 6,7 The authors synthesized BN films by plasma-assisted chemical vapor deposition ͑PACVD͒ and found that the electron emission occurred from sulfur ͑S͒-doped BN films at a low electric field.…”

Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering

“…The addition of S resulted in n-type conductivity and eight orders of magnitude decrease in resistivity, 14 whereas only a few results have been published concerning about the efficacy of C as a n-type dopant. 15 Through theoretical calculations elemental Si has been revealed as another candidate for achieving n-type doping and has been extensively studied. 4 Recently, n-type conductivity was confirmed and a clear decrease in the resistivity of c-BN films was observed after ion implantation with Si.…”

Field emission properties of BN coated Si tips by pulsed ArF laser deposition

“…Among these high band gap materials, the c-BN seems to be important because of effective doping capability, low dielectric constant, and high chemical and mechanical stability. [10][11][12] Moreover, nanometer size c-BN crystals can be deposited on Si microtips by laser and ion beam depositions without affecting the aspect ratio of emitter tips.…”