Electron-hole pair generation rate of a monolithic integrated waveguide/photodetector: application to the modeling of monolithic integrated waveguide/p-i-n photodiodes

Abstract

We report on the theoretical study of an integrated waveguidelphotodetector. We present the optical modeling of an integrated waveguide/photodetector based on the absorption of the evanescent optical field in an absorbing layer, deposited on the waveguiding layer.From this modeling, the expression of the electron-hole pair generation rate, for such a device, is established. Then, we apply this result to the calculation of the dynamic quantum efficiency of an integrated waveguidelp-i-n photodiode. The static and dynamic behaviors o f GaInAs p-i-n photodiodes monolithically integrated on a classical n-/n+ InP homostructure waveguide or on a GaInAsP/InP heterostructure waveguide are discussed and optimized structures are pointed out.

<title>Modeling of photodetectors for microwave and high-power applications</title>

“…It is constituted of a GaInAs undoped absorbing region, which forms the core of the waveguide, placed between two GaInAsP and InP P and N-type layers, for the confinement of the light. The The modeling is based on the integration of the classical current equations [1] which takes into account the correct photon generation profile in the absorbing region. This profile is deduced from a FD-BPM 2D simulation [2].…”