Electron-induced dissociation of SiH complexes in hydrogenated Si-doped GaAs. Application to the fabrication of microstructures

Silvestre, S.; Constant, E.; Bernard-Loridant, D.; Constant, M.; Chevallier, J.

doi:10.1006/spmi.2000.0880

Superlattices and Microstructures

2000

DOI: 10.1006/spmi.2000.0880

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Electron-induced dissociation of SiH complexes in hydrogenated Si-doped GaAs. Application to the fabrication of microstructures

S. Silvestre

E. Constant

D. Bernard-Loridant

et al.

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Cited by 2 publications

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Electron-induced dissociation of SiH complexes in hydrogenated Si-doped GaAs. Application to the fabrication of microstructures

Cited by 2 publications

References 7 publications

Strong isotope effects in the ultraviolet light-induced reactivation of dopants in hydrogenated or deuterated n-GaAs :Si

Strong isotope effects in the ultraviolet light-induced reactivation of dopants in hydrogenated or deuterated n-GaAs :Si

Electron induced dissociation of hydrogen or deuterium–silicon complexes in GaAs; application to the reliability of GaAs based electronic or optoelectronic devices

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