2004
DOI: 10.1063/1.1780606
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Electron injection-induced effects in Mn-doped GaN

Abstract: Electron injection into Mn-doped GaN resulted in pronounced changes in the minority carrier diffusion length and cathodoluminescence. In particular, multiple-fold decrease of the band-to-band cathodoluminescence intensity was observed in the temperature between −50 and 80°C. This decrease was accompanied by an increase of the minority carrier diffusion length in the material, measured by electron-beam-induced current. Temperature-dependent cathodoluminescence measurements revealed a recovery of the cathodolumi… Show more

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Cited by 14 publications
(8 citation statements)
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“…This demonstrates that exposure to the electron beam results in the increase of carrier lifetime (), since I CL is proportional to 1/. Similar phenomena were also observed in GaN, where the decay of NBE CL intensity occurred concomitantly with increasing diffusion length [38,50,51].…”
Section: Optical Studies Of Znsupporting
confidence: 57%
See 1 more Smart Citation
“…This demonstrates that exposure to the electron beam results in the increase of carrier lifetime (), since I CL is proportional to 1/. Similar phenomena were also observed in GaN, where the decay of NBE CL intensity occurred concomitantly with increasing diffusion length [38,50,51].…”
Section: Optical Studies Of Znsupporting
confidence: 57%
“…Fig. 10 (center)), with the rates of diffusion length increase ranging from ~13% to ~30% per 1000 s. This appears to be a common occurrence in wide bandgap semiconductors doped with species that create deep acceptor levels, as similar observations were made in (Al)GaN doped with Mg, Mn, Fe, and C [39,50,51]. It is also noteworthy that similar experiments conducted on bulk ZnO without any intentional dopants did no show any significant changes in minority carrier diffusion length [38].…”
Section: Influence Of Electron Trapping On Minority Carrier Diffusionmentioning
confidence: 51%
“…For each temperature, CL measurements were carried out at a different location under continuous excitation (up to ϳ2000 s). 22,23 EBIC measurements carried out on undoped bulk ZnO substrates did not reveal any noticeable increase of L with t (up to 2000 s), suggesting that the presence of phosphorus is important for the observed behavior. The electron beam penetration depth in the material was estimated to be ϳ0.8 m. Excitation was combined with periodic acquisition of CL spectra taken under SEM magnification of 4000.…”
mentioning
confidence: 86%
“…23 As L is proportional to the square root of lifetime and depends linearly on t, 22,23,26 the inverse CL intensity, 1 / I, which is also proportional to (larger determines longer nonequilibrium carrier stay in the band, and, as a result, lower rate of recombination), should depend on duration of electron injection quadratically. 23 As L is proportional to the square root of lifetime and depends linearly on t, 22,23,26 the inverse CL intensity, 1 / I, which is also proportional to (larger determines longer nonequilibrium carrier stay in the band, and, as a result, lower rate of recombination), should depend on duration of electron injection quadratically.…”
Section: Exhibits a Continuous Decay With Increasing Duration Of Elecmentioning
confidence: 99%
“…It is a very ecofriendly material that does not contain substances such as As and Hg [4,5]. With its strong electron affinity, GaN has especially superior voltage characteristics such as electron mobility, saturated electron velocity, and electric field breakdown, as well as superior optical characteristics.…”
Section: Introductionmentioning
confidence: 99%