Electron microscope observations of lattice imperfections and their movement on the atomic scale

Hashimoto, Hiroyuki; Takai, Y.; Yokota, Yasuhiro

doi:10.1107/s0108767388006440

Cited by 5 publications

(8 citation statements)

References 5 publications

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“…This method also has been applied to crystals containing defects such as a twin boundary and a stacking fault. The observed contrast was compared with theoretical images calculated by using the many-beam diffraction and image-formation theories, and it was confirmed that the AFF imaging condition using tilted illumination produces images of the atoms in their correct position (Hashimoto et al, 1988).…”

Section: Introductionmentioning

confidence: 84%

“…Near the center of Figure 4a the images of the atoms with stepped structure are observed-images that can be found everywhere in the specimen (Hashimoto et al, 1988). Since the images of atoms appear rather clearly, the dislocation line seems to be perpendicular to the specimen surface.…”

Section: Mixed Dislocationmentioning

confidence: 93%

“…In this case the angle of the (000) and (200) reflections cxl against the optical axis is different from that of (111) and (117) az. As discussed in the previous paper (Hashimoto et al, 1988) imaging method is useful for the study of the atomic structure around defects such as dislocations and stacking faults because diffuse scattering and streaks in the diffraction pattern (which are caused by the small displacements of atoms around the defects) are projected onto the image plane without a phase shift, and they produce images of the displaced atoms in their correct positions. …”

Section: Effect Of Partial Coherence Of Electron Waves On the Images mentioning

confidence: 99%

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Detection of small displacement of atoms in crystals by atom resolution electron microscopy

Hashimoto

Kuwabara

Takai

et al. 1989

J. Elec. Microsc. Tech.

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Four kinds of works on the detection of displacement of atoms in crystals are shown. The irregular small displacement of atoms has been detected, with an accuracy of about 0.1 A around dislocations and stacking faults in Au crystals as shown by their electron microscope images. The displacement of the atomic images is recorded by aberration-free focus (AFF). Even when the periodic displacement of atoms in SiC and TaS2 crystals is around 0.1% of the lattice constant, this displacement has been revealed as the weak-contrast anomaly in the images. Using in situ observations by a TV system attached to an electron microscope, the rapid movements of atoms that have taken place within 1/30 sec have been recorded. Using the technique of successive subtraction of the images by TV system and image sigma, only the images of moving atoms in Au crystal have been recorded each 1/10 sec.

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Section: Introductionmentioning

confidence: 84%

Section: Mixed Dislocationmentioning

confidence: 93%

Section: Effect Of Partial Coherence Of Electron Waves On the Images mentioning

confidence: 99%

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Detection of small displacement of atoms in crystals by atom resolution electron microscopy

Hashimoto

Kuwabara

Takai

et al. 1989

J. Elec. Microsc. Tech.

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“…The structure of the 'locked' dislocation with Burgers vector b =$ [110] and dislocation direction [ l l O ] is the same as in fig. 3 of the paper by Hashimoto et al (1989). The difference is Onsy that the bright dots in Eu,O,correspand to the Eu3+ ions arranged in a f.c.c.…”

Section: Dislocation Reactionmentioning

confidence: 95%

“…It is interesting that the image of the partial dislocations (also in the above section) in this complex oxide is consistent with the images of dislocations in the simple f.c.c. crystal, such as Au (Hashimoto, Takai and Yokota 1989) and Ge (Bourret and Desseaux 1979). From fig.…”

Section: ( I L L ) Surface Step Formed By An Extended Dislocationmentioning

confidence: 98%

In situobservations of dislocation motion and relevant surface phenomena in Eu₂O₃

Ning¹,

1990

Philosophical Magazine A

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In situ High-Resolution Electron Microscopy

Sinclair¹

1989

Proc. annu. meet. Electron Microsc. Soc. Am.

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The strength of in situ electron microscopy lies in its ability to observe directly material changes which are pertinent to bulk processes. The most rigorous experiments employ a purpose-built specimen holder to simulate specific testing conditions (e.g. heating, cooling, straining, environment), with the associated microstructural changes deduced from appropriate micrographs, diffraction patterns or video-recordings. The influence of the electron microscope itself must always be taken into account (e.g. thin-foil specimen, large electron flux, high electron energy). However when artifacts are overcome, remarkable insight into the mechanisms of the behavior of solids can be achieved. The purpose of this article is to review our work in extending this capability into the high-resolution regime, so that atomic reactions can be followed. In the right circumstances this allows straightforward interpretation of atomic-scale phenomena.Our studies have employed a Philips EM430ST, 300 kV transmission electron microscope (TEM) with about 0.2 nm resolution. To-date we have carried out only heating experiments, utilizing the standard side-entry, single-tilt specimen holder (model number PW 6592), mainly on reactions at semiconductor interfaces. The zone axis orientation necessary for high-resolution TEM is obtained by careful sectioning of the substrate crystals and judicious positioning in the heating holder. The imaging conditions (including drift) can be optimized at a temperature slightly below that required for the changes of interest, so that recording can be initiated immediately on ramping up.

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Electron microscope observations of lattice imperfections and their movement on the atomic scale

Cited by 5 publications

References 5 publications

Detection of small displacement of atoms in crystals by atom resolution electron microscopy

Detection of small displacement of atoms in crystals by atom resolution electron microscopy

In situobservations of dislocation motion and relevant surface phenomena in Eu₂O₃

In situ High-Resolution Electron Microscopy

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Electron microscope observations of lattice imperfections and their movement on the atomic scale

Cited by 5 publications

References 5 publications

Detection of small displacement of atoms in crystals by atom resolution electron microscopy

Detection of small displacement of atoms in crystals by atom resolution electron microscopy

In situobservations of dislocation motion and relevant surface phenomena in Eu2O3

In situ High-Resolution Electron Microscopy

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In situobservations of dislocation motion and relevant surface phenomena in Eu₂O₃