Electron mobility in InO.53GaO.47As as a function of concentration and temperature

Chin, V.W.L.; Osotchan, Tanakorn; Tansley, T.L.

doi:10.1016/0026-2692(95)00010-f

Cited by 2 publications

(2 citation statements)

References 19 publications

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“…437, alphap.caug=0.9222, betan.caug=1.818, betap.caug=1.058, gamman.caug=2.526 and gammap.caug=7.659. A comparison between these fitted results versus the calculated carrier mobility from (Sotoodeh et al, 2000;Arora et al, 1992;Chin et al, 1995) as well as some experimental Hall data (Lee & Forrest, 1991;Ohtsuka et al, 1988;Pearsall, 1981) is shown in Fig. 4(a) till Fig.…”

Section: Concentration-dependent Minority Carrier Lifetime Modelmentioning

confidence: 76%

Modeling and Optimization of Three-Dimensional Interdigitated Lateral p-i-n Photodiodes Based on In0.53Ga0.47As Absorbers for Optical Communications

Menon¹,

Ehsan²,

Shaari³

2011

Advances in Photodiodes

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Section: Concentration-dependent Minority Carrier Lifetime Modelmentioning

confidence: 76%

Modeling and Optimization of Three-Dimensional Interdigitated Lateral p-i-n Photodiodes Based on In0.53Ga0.47As Absorbers for Optical Communications

Menon¹,

Ehsan²,

Shaari³

2011

Advances in Photodiodes

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“…mu1n.caug, mu1p.caug, mu2n.caug, and mu2p.caug are the minimum and maximum mobilities of electrons and holes respectively (cm 2 /V-s The mobility data has been fit to Eqs. (1) and (2) A comparison between these fitted results versus the calculated carrier mobility from [4,5,6] as well as some experimental Hall data [7,8,9] is shown in Fig. 1 (a) till Fig.…”

Section: Low-field Mobility Modelmentioning

confidence: 86%

Concentration and temperature-dependent low-field mobility model for In0.53Ga0.47As interdigitated lateral pin PD

Menon

Kandiah

Shaari

2008

IEICE Electron. Express

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Abstract:The fitted parameters for the analytic function used to specify doping-and temperature-dependent low-field mobilities for In 0.53 Ga 0.47 As is described in this paper. The developed model was compared with other mobility models as well as measured Hall data from periodical literature and very good agreement is observed. The result of this work was used to develop an In 0.53 Ga 0.47 As interdigitated lateral p-i-n photodiode (ILPP) model and good correlation was obtained when compared with the experimentally developed device. The results of this work would be useful in the development of In 0.53 Ga 0.47 As-based devices using commercial device simulation packages. Keywords: mobility, In 0.53 Ga 0.47 As, p-i-n, photodiode, lateral, interdigitated Classification: Photonics devices, circuits, and systems [2] D. M. Caughey and R. E. Thomas, "Carrier mobilities in silicon empirically related to doping and field," Proc. IEEE, vol. 55, no. 12, pp. 2192-2193, Dec. 1967 S. Datta, S. Shi, K. P. Roenker, M. M. Cahay, and W. E. Stanchina, "Simulation and design of InAlAs/InGaAs pnp heterojunction bipolar transistors," IEEE Trans. Electron Devices, vol. 45, no. 8, pp. 1634-1643, Aug. 1998field mobility model for III-V compounds applicable in device simulation codes," J. Appl. Phys., vol. 87, no. 6, pp. 2890-2900, March 2000 N. D. Arora, J. R. Hauser, and R. J. Roulstan, "Electron and hole mobilities in silicon as a function of concentration and temperature," IEEE Trans. References

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Electron mobility in InO.53GaO.47As as a function of concentration and temperature

Cited by 2 publications

References 19 publications

Modeling and Optimization of Three-Dimensional Interdigitated Lateral p-i-n Photodiodes Based on In0.53Ga0.47As Absorbers for Optical Communications

Modeling and Optimization of Three-Dimensional Interdigitated Lateral p-i-n Photodiodes Based on In0.53Ga0.47As Absorbers for Optical Communications

Concentration and temperature-dependent low-field mobility model for In0.53Ga0.47As interdigitated lateral pin PD

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