Electron-Optical-Phonon Interaction in Semiconductor Multiple-Quantum-Well Structures

Chang, Yen-Jen; McCombe, B. D.; Mercy, J.-M.; Reeder, A.A.; Ralston, J.D.; Wicks, G.

doi:10.1103/physrevlett.61.1408

Cited by 55 publications

(16 citation statements)

References 27 publications

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“…The resonant magnetopolaron coupling manifests itself near the LO-phonon frequency for low electron densities (see, e. g., Refs. [26,27,28]). Cyclotron-resonance measurements performed on semiconductor quantum wells with high electron density [29] reveal anticrossing near the TO-phonon frequency rather than near the LO-phonon frequency.…”

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confidence: 97%

Polarons in Semiconductor Quantum Structures

Devreese

2004

Molecular Nanowires and Other Quantum Objects

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In this presentation three recent contributions to the theory of continuum (or "Frohlich"-) polarons are reviewed. (i) Using a generalization of the JensenFeynman variational principle within the path-integral formalism for identical particles, the ground-state energy of a confined N -polaron system is studied as a function of N and of the electron-phonon coupling strength.(ii) A theoretical investigation of the optical properties of stacked quantum dots is presented, which is based on the non-adiabatic approach. (iii) Cyclotron-resonance (CR) spectra of a gas of interacting polarons in a GaAs/AIAs quantum well are theoretically investigated taking into account the magnetoplasmon-phonon mixing and the band nonparabolicity. The theory explains that, for a high-density polaron gas, anticrossing of the CR spectra occurs near the GaAs TO-phonon frequency rather than near the GaAs LO-frequency in a good agreement with experimental data.Keywords: polaron, quantum dot, cyclotron resonance, optical absorption, luminescence Interacting poiarons in a quantum dotThermodynamic and optical properties of interacting polarons have attracted increasing attention because of their possible relevance to physical phenomena in high-Tc superconductors (see, e. g., Ref.[1] and references therein). In this section, a system of N electrons with mutual Coulomb repulsion and interacting with the lattice vibrations is considered. A parabolic confinement potential, characterised by the frequency parameter no, is assumed. The total number of electrons is N = 2:cr Ncr, where Ncr is the number of electrons with spin projection (J = ±1/2. A canonical ensemble is treated, where the numbers of electrons Ncr for each (J are fixed. The bulk phonons (characterized by wave vectors q and frequencies wq ) are described by complex coordinates. The full set of electron coordinates is denoted by x == {Xj,cr }.

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confidence: 97%

Polarons in Semiconductor Quantum Structures

Devreese

2004

Molecular Nanowires and Other Quantum Objects

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“…In particular, substitutional shallow donors will not be linked to the valley but to the lower lying X valleys [1]. Furthermore, these valleys are no longer degenerate but the X z and X x,y valleys will split into different energies due to the quantum confinement in the growth (z) direction and due to biaxial strain effects.Theoretical studies on shallow impurities in quantum wells used mainly variational techniques [2,3] which have compared successfully with measurements in several experimental situations [4][5][6], and were concentrated mainly on GaAs-AlGaAs type-I quantum wells. Since the successful growth of n-type Si-doped GaAsAlAs structures [7] the calculation of these binding energies have become important for the understanding of bistable shallow-deep silicon donors in GaAs-AlAs [8], silicon interdiffusion [9] and photoluminescence spectra such as obtained by Lee et al [10].…”

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confidence: 99%

Excited states of donors bound toXvalleys in GaAs–AlAs type II structures

Weber

Carneiro

1998

Superlattices and Microstructures

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“…Magneto-optical measurements of intra-donor 1s-2p+ transition energies in doped GaAs-AlGaAs MQW were reported by several authors [1][2][3][4]. The kind of phonon present in the polaronic interaction was the main point of discussion.…”

Section: Introductionmentioning

confidence: 99%

“…The kind of phonon present in the polaronic interaction was the main point of discussion. While some experimental works claim the observation of electron interaction with nonbulk phonons modes [1,2], other experimentalists claim that the electron interacts only with the bulk longitudinal optical (LO) phonon of GaAs [3,4].…”

Section: Introductionmentioning

confidence: 99%

Magnetopolaron effects on the intradonor 1s-2p+ transition energies in a GaAs - AlGaAs double quantum well

2006

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In this work we present a calculation of the intradonor 1s-2p+ transition energies for an impurity donor present in a GaAs-AlGaAs Double Quantum Well structure as a function of an applied external magnetic field. In our calculation the impurity energy levels were obtained from a variational method by choosing a Gaussian trial wave function, and the energy corrections due to the polaronic effect were included by second order perturbation theory IWBPT as modified by Cohn, Larsen and Lax. We have considered only the GaAs bulk LO phonon in the electron-phonon coupling. A very good agreement between the theoretical and experimental results for a DQW consisting of two 100Å well widths separated by a 100Å potential barrier width was obtained.

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Electron-Optical-Phonon Interaction in Semiconductor Multiple-Quantum-Well Structures

Cited by 55 publications

References 27 publications

Polarons in Semiconductor Quantum Structures

Polarons in Semiconductor Quantum Structures

Excited states of donors bound toXvalleys in GaAs–AlAs type II structures

Magnetopolaron effects on the intradonor 1s-2p+ transition energies in a GaAs - AlGaAs double quantum well

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