Electron relaxation in quantum dots by means of Auger processes

Bockelmann, Ulrich; Egeler, T.

doi:10.1103/physrevb.46.15574

Cited by 351 publications

(181 citation statements)

References 18 publications

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“…The trapping rate γ 3 depends then essentially on Auger processes which are 60 times more efficient than the holes capture in the QD. Concerning the de-trapping rate γ 4 of holes from the defect to the continuum reservoir, either phonons absorption, or Auger processes involving one incident charge in the barrier and one target charge in the defect [1,45,46] which explain the square root power dependence, can be considered. On the one hand, the phonon-assisted mechanism would concern the absorption of acoustic phonons because the optical phonon states are not populated at low temperature [46].…”

Section: B Energy Shifts Of the Neutral Exciton And The Positive Trionmentioning

confidence: 99%

Photoneutralization and slow capture of carriers in quantum dots probed by resonant excitation spectroscopy

et al. 2013

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We investigate experimentally and theoretically the resonant emission of single InAs/GaAs quantum dots in a planar microcavity. Due to the presence of at least one residual charge in the quantum dots, the resonant excitation of the neutral exciton is blocked. The influence of the residual doping on the initial quantum dots charge state is analyzed, and the resonant emission quenching is interpreted as a Coulomb blockade effect. The use of an additional non-resonant laser in a specific low power regime leads to the carrier draining in quantum dots and allows an efficient optical gating of the exciton resonant emission. A detailed population evolution model, developed to describe the carrier draining and the optical gate effect, perfectly fits the experimental results in the steady state and dynamical regimes of the optical gate with a single set of parameters. We deduce that ultra-slow Auger-and phonon-assisted capture processes govern the carrier draining in quantum dots with relaxation times in the 1 -100 µs range. We conclude that the optical gate acts as a very sensitive probe of the quantum dots population relaxation in an unprecedented slow-capture regime.

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Section: B Energy Shifts Of the Neutral Exciton And The Positive Trionmentioning

confidence: 99%

Photoneutralization and slow capture of carriers in quantum dots probed by resonant excitation spectroscopy

et al. 2013

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“…The effects of confined acoustical 5 and optical phonons ͑including interface ones͒, [5][6][7][8][9][10][11][12][13][14][15] plasmons, [16][17][18] polaronlike states in QDs, 7,19,20 and the Auger-like process 21,22 have been analyzed.…”

Section: Introductionmentioning

confidence: 99%

Quantum dot energy relaxation mediated by plasmon emission in doped covalent semiconductor heterostructures

et al. 2007

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The interaction between interface plasmons within a doped substrate and quantum dot electrons or holes has been theoretically studied in double heterostructures based on covalent semiconductors. The interface plasmon modes, the corresponding dispersion relationship, and the intraband carrier relaxation rate in quantum dots are reported. We find the critical points in the interface plasmon density of states for multilayered structures results in enhanced quantum dot intraband carrier relaxation when compared to that for a single heterostructure. A detailed discussion is made of the relaxation rate and the spectral position dependencies on the quantum dot layer thickness as well as on the dopant concentration. The material system considered was a p-Si/ SiO 2 / air heterostructure with Ge quantum dots embedded in an SiO 2 layer. This structure is typical of those used in technical applications.

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“…(3) the additional term accounts for the contribution of Auger processes to carrier escape. f (P ) has the general form P β /(P β +P β 0 ), where β indicates the power law exponent for the dependence of the Auger processes on incident power, and P 0 is the excitation density where saturation of the Auger processes appears [19].…”

mentioning

confidence: 99%

Temperature dependence of the zero-phonon linewidth in quantum dots: An effect of the fluctuating environment

et al. 2007

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Electron relaxation in quantum dots by means of Auger processes

Cited by 351 publications

References 18 publications

Photoneutralization and slow capture of carriers in quantum dots probed by resonant excitation spectroscopy

Photoneutralization and slow capture of carriers in quantum dots probed by resonant excitation spectroscopy

Quantum dot energy relaxation mediated by plasmon emission in doped covalent semiconductor heterostructures

Temperature dependence of the zero-phonon linewidth in quantum dots: An effect of the fluctuating environment

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