Electron temperature and ion density measurements in a glow discharge of an Ar–N<sub>2</sub>mixture

Reyes, Patricia Román; Torres, C; Martı́nez, H.

doi:10.1080/10420150.2013.860975

Cited by 17 publications

(11 citation statements)

References 15 publications

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“…Figure 4 shows the variation of electron temperature as a function of helium percentage at 2.0 Torr pressure, together with the other measured results for comparison. The result obtained in the present study for pure N 2 discharge is 22% lower than the values reported by Mendez-Martinez et al, 15 and 29% and 42% higher than the results obtained by Reyes et al 16 and Martinez et al, 17 respectively (see Figure 4). The increase in electron temperature with helium percentage is due to the fact that the electron collision cross-section for helium in ground state (%2 Â 10 À21 m 2 ) is smaller than the cross-section for nitrogen (%1.2 Â 10 À19 m 2 ) in the range of 1-20 eV.…”

Section: Methodscontrasting

confidence: 81%

“…As is seen, the ion density shows an increasing trend with the helium percentage. The results obtained in the present study for pure N 2 discharge is 22% lower than the values reported by Reyes et al, 16 and 38% and 17% higher than the results reported by Mendez-Martinez et al 15 and Martinez et al, 17 respectively (see Figure 5). Figure 6 shows the optical emission spectroscopy (OES) spectra of glow discharge plasma at a pressure of 2.0 Torr.…”

Section: Methodscontrasting

confidence: 78%

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Characterization of direct current He-N2 mixture plasma using optical emission spectroscopy and mass spectrometry

et al. 2014

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This study analyses the glow discharge of He and N 2 mixture at the pressure of 2.0 Torr, power of 10 W, and flow rate of 16.5 l/min, by using optical emission spectroscopy and mass spectrometry. The emission bands were measured in the wavelength range of 200-1100 nm. The principal species observed were N 2, and He, which are in good agreement with the results of mass spectrometry. Besides, the electron temperature and ion density were determined by using a double Langmuir probe. Results indicate that the electron temperature is in the range of 1.55-2.93 eV, and the electron concentration is of the order of 10 10 cm À3 . The experimental results of electron temperature and ion density for pure N 2 and pure He are in good agreement with the values reported in the literature. V C 2014 AIP Publishing LLC.

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Section: Methodscontrasting

confidence: 81%

Section: Methodscontrasting

confidence: 78%

Characterization of direct current He-N2 mixture plasma using optical emission spectroscopy and mass spectrometry

et al. 2014

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“…It is worthwhile to note that the PEALD SiN x films that are deposited with Ar/NH 3 plasma ions tend to show only single Gaussian fitted to -NH x vibrational modes, indicating that the films are mainly composed of primarily -NH, unlike the case where N 2 /NH 3 -based PEALD processes incorporate more contribution from -NH 2 vibration (Figure c,d). Thus, if we compare the effect of plasma species created during Ar/NH 3 and N 2 /NH 3 discharging, we observe that the plasma species created during Ar/NH 3 discharging are more effective in removing surface hydrogen species during growth than plasma species created during N 2 /NH 3 discharging, as the plasma properties (such as electron density, ion density, and total collisional energy required per electron–ion pair) of Ar + are better suited to the task. − However, further studies are required to identify the exact plasma species created by hollow cathode plasma discharging. Additionally, based on FT-IR absorbance, a film deposited at Ar/NH 3 90/30 (cm 2 (STP) min –1 ) contains ∼20% less hydrogen bonding concentration than that of a film deposited at N 2 /NH 3 90/30 (cm 2 (STP) min –1 ) at the same process temperature of 300 °C.…”

Section: Resultsmentioning

confidence: 99%

Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper

Kim

Meng

Kim

et al. 2018

ACS Appl. Mater. Interfaces

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Correlations between physical properties linking film quality with wet etch rate (WER), one of the leading figures of merit, in plasma-enhanced atomic layer deposition (PEALD) grown silicon nitride (SiN x ) films remain largely unresearched. Achieving a low WER of a SiN x film is especially significant in its use as an etch stopper for technology beyond 7 nm node semiconductor processing. Herein, we explore the correlation between the hydrogen concentration, hydrogen bonding states, bulk film density, residual impurity concentration, and the WERs of PEALD SiN x using Fourier transform infrared spectrometry, X-ray reflectivity, and spectroscopic ellipsometry, etc. PEALD SiN x films for this study were deposited using hexachlorodisilane and hollow cathode plasma source under a range of process temperatures (270–360 °C) and plasma gas compositions (N2/NH3 or Ar/NH3) to understand the influence of hydrogen concentration, hydrogen bonding states, bulk film density, and residual impurity concentration on the WER. Varying hydrogen concentration and differences in the hydrogen bonding states resulted in different bulk film densities and, accordingly, a variation in WER. We observe a linear relationship between hydrogen bonding concentration and WER as well as a reciprocal relationship between bulk film density and WER. Analogous to the PECVD SiN x processes, a reduction in hydrogen bonding concentration arises from either (1) thermal activation or (2) plasma excited species. However, unlike the case with silane (SiH4)-based PECVD SiN x , PEALD SiN x WERs are affected by residual impurities of Si precursors (i.e., chlorine impurity). Thus, possible wet etching mechanisms in HF in which the WER is affected by hydrogen bonding states or residual impurities are proposed. The shifts of amine basicity in SiN x due to different hydrogen bonding states and the changes in Si electrophilicity due to Cl impurity content are suggested as the main mechanisms that influence WER in the PEALD processes.

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“…During the complicated deposition process of silver thin films, the discharge is maintained by sputtering gas. In Ar/ N 2 discharge, Ar + and N 2 + are the main ions, and Ar atoms, N 2 molecules, and a small amount of N + ion also exist in the vacuum, which have been detected by plasma diagnostic techniques in some literatures [20][21][22]. ere is no doubt that Ar + is the main ion in Ar discharge, and N 2 + is the main ion in N 2 discharge.…”

Section: Mechanism Of Microstructure Evolutionmentioning

confidence: 99%

Understanding the Preferred Crystal Orientation of Sputtered Silver in Ar/N₂ Atmosphere: A Microstructure Investigation

Zhu

Zhang

et al. 2019

Advances in Materials Science and Engineering

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Silver thin films were prepared by direct current (DC) magnetron sputtering technique in Ar/N2 atmosphere with various N2 volumetric ratios on Si substrates. Silver thin films prepared in pure Ar atmosphere show highly (111) preferred orientation. However, as the N2 content increases, Ag (111) preferred orientation evolves into (100) preferred orientation gradually. When N2 content is more than 12.5 vol.%, silver thin films exhibit highly (100) preferred orientation. Moreover, the average grain size decreases with increasing N2 content. Silver thin films with low relative density are prepared at high N2 content, which results in higher resistivity of films. By analyzing the resistivity and microstructures of silver thin films, the optimum range of N2 content to get compact silver thin films is found to be not more than 33.3 vol.%. Finally, the mechanism of N2 addition on microstructure evolution of silver thin films was proposed.

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Electron temperature and ion density measurements in a glow discharge of an Ar–N₂mixture

Cited by 17 publications

References 15 publications

Characterization of direct current He-N2 mixture plasma using optical emission spectroscopy and mass spectrometry

Characterization of direct current He-N2 mixture plasma using optical emission spectroscopy and mass spectrometry

Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper

Understanding the Preferred Crystal Orientation of Sputtered Silver in Ar/N₂ Atmosphere: A Microstructure Investigation

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Electron temperature and ion density measurements in a glow discharge of an Ar–N2mixture

Cited by 17 publications

References 15 publications

Characterization of direct current He-N2 mixture plasma using optical emission spectroscopy and mass spectrometry

Characterization of direct current He-N2 mixture plasma using optical emission spectroscopy and mass spectrometry

Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper

Understanding the Preferred Crystal Orientation of Sputtered Silver in Ar/N2 Atmosphere: A Microstructure Investigation

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Electron temperature and ion density measurements in a glow discharge of an Ar–N₂mixture

Understanding the Preferred Crystal Orientation of Sputtered Silver in Ar/N₂ Atmosphere: A Microstructure Investigation