Electron transport in AlGaN/GaN HEMTs using a strain model

A new lattice-matched In0.17Al0.83N ∼ GaN based heterostructure IMPATT diode for terahertz application

“…With the advancement of technology, heterostructures such as GaAs/AlGaAs, Si/SiGe, GaAs/Ga 0.52 In 0.48 P, GaAs/Ge and AlGaN/GaN have been used for both SDR and DDR IMPATT diodes fabrication and performance simulation, aimed at achieving low noise, high rf output power and high dc-to-rf conversion efficiency [12][13][14][15][16]. For the past decade, the research and development of AlGaN/GaN based high-electron-mobility transistors (HEMTs) and heterostructure biploar transistors for high-temperature, high-frequency and highpower operation have rapidly advanced due to its outstanding combination of fundamental physical properties, such as large band-gap, strong spontaneous and piezoelectric polarization fields [17][18][19]. However, the AlGaN/GaN interface is still facing the strain induced reliability problem due to large lattice mismatch (∼18%) between AlGaN barrier and GaN buffer layer.…”