Electron transport in InAs/AlGaSb ballistic rectifiers

Abstract

Nonlinear transport properties of a ballistic rectifier fabricated from InAs/AlGaSb heterostructures are reported. The operation of the ballistic rectifier is based on the guidance of carriers by a square anti-dot structure. The structure was defined by electron beam lithography and wet chemical etching. The DC characteristics and magneto-transport properties of the ballistic rectifier have been measured at 77 K and 4.2 K. Rectification effects relying on the ballistic transport were observed. From the four-terminal resistance measured at low magnetic fields, we also observed magneto-resistance fluctuations corresponding to the electron trajectories and symmetry-breaking electron scattering, which are influenced by the magnetic field strength.

Electron transport properties in InAs four‐terminal ballistic junctions under weak magnetic fields

“…3(b). Each V 13 plot shows clear nonlinearity and negative polarity independent of the current polarity, even at 300 K, in similar fashions of precedents [5,[8][9][10][11][12][18][19][20]. Temperature dependence is explained with the difference of the mean free path on the measurement temperature.…”

“…We recently reported the clear nonlinear properties between 4.2 K and 300 K in InAs/AlGaSb ballistic rectifiers consisting of four-terminal cross junction structures with antidot [18,19] or slanted electron injection narrow wire structures [20]. Furthermore, experimental trials of T-shaped three-terminal ballistic junctions were also reported with this heterostructure [21].…”

Nonlinear electron transport properties and rectification effects in InAs/AlGaSb ballistic devices

“…Therefore, this heterostructure has possibility for realizing new room temperature devices with ballistic electrons. As one of candidate devices, we recently reported InAs/AlGaSb ballistic rectification devices which were four-terminal device with electron scattering structures such as a triangular anti-dot or waveguide boundary [16][17][18]. In this report, we show the nonlinear electron transport properties and rectification effects in InAs/AlGaSb three-terminal ballistic junctions at 77 K and 300 K.…”

Positive centre voltage in T-branch junctions on n-type GaAs/AlGaAs based on hydrodynamics

“…On n-type material, the V V C 0 ( )-characteristic is parabolic for small V 0 while at large V 0 (in particular at low carrier density in the current channel) the positively biased branch becomes depleted leading to linear behaviour [18][19][20][26][27][28]. Other mechanisms are hot-electron thermopower [29,30] and ballistic charging as in four-terminal ballistic rectifiers by carrier reflection [31,32] or injection [33][34][35][36], which also contribute to parabolic characteristics. The sign of these contributions always corresponds to that of the charge carriers, i.e.…”