Electron transport in modulation-doped InAlAs/InGaAs/InAlAs and AlGaAs/InGaAs/AlGaAs heterostructures

Požela, J.; Požela, K.; Jucienė, V.; Sužiedėlis, Algirdas; Žurauskienė, N.; Shkolnik, A. S.

doi:10.3952/lithjphys.51401

Cited by 7 publications

(2 citation statements)

References 24 publications

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“…It has been observed that there is rise in electron mobility in In 0.7 Al 0.3 As/In 0.8 Ga 0.2 As system with rise in InAs content in the InAlAs barrier and in the Al x Ga 1-x As/In 0.2 Ga 0.8 As system with a decrease in AlAs content in the AlGaAs barrier. Also, it has been seen that by taking a thin layer of InAs in the In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As quantum well system, the mobility enhances [27].…”

Section: Introductionmentioning

confidence: 99%

Study of nonmonotonic electron mobility due to influence of asymmetric structure parameters in pseudomorphic heterojunction field effect transistors

Panda

Pradhan²,

Sahu³

et al. 2022

Phys. Scr.

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Nonmonotonic electron mobility is obtained in InxGa1-xAs/GaAs double quantum well pseudomorphic heterostructure field effect transistor by changing the structure parameters. We show that a rapid drop in mobility occurs at the point of resonance of sub-band states due to asymmetric variation of doping concentrations. The sub-band wave function distributions change significantly near the resonance and influence the sub-band mobilities through the scattering potentials, there by causing the dip in µ. The depth of nonlinearity in µ enhances by increasing the central barrier width and the difference between the well widths. On the other hand, variation of µ as a function of asymmetric change of well widths leads to a hump like raise in µ under unequal doping concentrations. Our results of nonlinear mobility can be utilized in low temperature transistor applications.

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Section: Introductionmentioning

confidence: 99%

Study of nonmonotonic electron mobility due to influence of asymmetric structure parameters in pseudomorphic heterojunction field effect transistors

Panda

Pradhan²,

Sahu³

et al. 2022

Phys. Scr.

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“…Twodimensional electron gas (2DEG) confined to a quantum well (QW) InGaAs demonstrates both high electron mobility and drift velocity. The most important factors that limit electron mobility μ e in HEMT are the polar optical phonon scattering [1,22] and remote ionized impurity scattering [3]. In order to improve μ e one should vary the design of the heterostructure, in particular the QW and the barrier layer.…”

Section: Introductionmentioning

confidence: 99%

Quantum and transport scattering times in AlGaAs/InGaAs nanoheterostructures with AlAs inserts in the spacer layer

Галиев¹,

Васильевский²,

Klimov³

et al. 2016

Lith. J. Phys.

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The influence of nano-sized AlAs inserts in the spacer layer AlGaAs on scattering mechanisms of AlGaAs/InGaAs nanoheterostructures has been considered. It was shown that the introduction of AlAs lead to mobility enhancement up to 20%. The ratio of transport-to-quantum scattering times revealed that in the case of the spacer with AlAs inserts the scattering on ionized Sidonors is strongly decreased in comparison to the spacer without AlAs.

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Asymmetric Doping‐Dependent Electron Transport Mobility in In_xGa_1–xAs/GaAs Quantum Well Field‐Effect Transistor Structure

Panda,

Pradhan,

Mallik

et al. 2024

Physica Status Solidi (b)

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We analyze the asymmetric doping‐dependent electron mobility μ of GaAs/InGaAs/GaAs quantum well field‐effect transistor (QWFET) structure. We consider doping concentrations, nd1 and nd2, in the substrate and surface barriers, respectively, and study μ as a function of nd2, taking (nd1 + nd2) unchanged. An increase in nd2 decreases nd1, yielding interesting changes in the occupation of subbands. For well width W < 164 Å, μ is due to single subband occupancy (SSO). Around W = 164 Å, there occurs first SSO, then double subband occupancy (DSO), and again SSO with an increase in nd2. Near the transition of subbands, abrupt discontinuities in μ arise due to inter‐subband effects. Thus, high to low and then high values of μ are obtained, displaying almost flat‐like variations, symmetric about |nd2 − nd1| = 0. As W becomes wider, complete DSO occurs throughout the range of nd2 having reduced μ. Alternatively, keeping nd1 unchanged and by increasing nd2, μ raises due to enhanced N s , with a drop near the transition from SSO to DSO. Under SSO, μ is controlled by the ionized impurity and alloy disorder scatterings, while under DSO, the impurity scattering determines μ. Our analysis on μ can help to examine the inter‐subband effects on device characteristics of the QWFET system.

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Electron transport in modulation-doped InAlAs/InGaAs/InAlAs and AlGaAs/InGaAs/AlGaAs heterostructures

Cited by 7 publications

References 24 publications

Study of nonmonotonic electron mobility due to influence of asymmetric structure parameters in pseudomorphic heterojunction field effect transistors

Study of nonmonotonic electron mobility due to influence of asymmetric structure parameters in pseudomorphic heterojunction field effect transistors

Quantum and transport scattering times in AlGaAs/InGaAs nanoheterostructures with AlAs inserts in the spacer layer

Asymmetric Doping‐Dependent Electron Transport Mobility in In_xGa_1–xAs/GaAs Quantum Well Field‐Effect Transistor Structure

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Electron transport in modulation-doped InAlAs/InGaAs/InAlAs and AlGaAs/InGaAs/AlGaAs heterostructures

Cited by 7 publications

References 24 publications

Study of nonmonotonic electron mobility due to influence of asymmetric structure parameters in pseudomorphic heterojunction field effect transistors

Study of nonmonotonic electron mobility due to influence of asymmetric structure parameters in pseudomorphic heterojunction field effect transistors

Quantum and transport scattering times in AlGaAs/InGaAs nanoheterostructures with AlAs inserts in the spacer layer

Asymmetric Doping‐Dependent Electron Transport Mobility in InxGa1–xAs/GaAs Quantum Well Field‐Effect Transistor Structure

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Asymmetric Doping‐Dependent Electron Transport Mobility in In_xGa_1–xAs/GaAs Quantum Well Field‐Effect Transistor Structure