Electron transport properties in GaAs at high electric fields

Požela, J.; Reklaitis, A.

doi:10.1016/0038-1101(80)90057-x

Cited by 148 publications

(47 citation statements)

References 15 publications

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“…We calculated these curves using the aforementioned models at different impurity concentrations. The graphs show the qualitative correspondence with the experimental data and Monte Carlo simulation results represented in the papers [40,41]. According to the curves, the growth of the electric field intensity in GaAs leads to the significant reduction of carrier mobilities.…”

Section: Models and Simulation Methodssupporting

confidence: 72%

“…According to Figure 5, the electric field intensity in the photodiode is sufficient for the saturation of the carrier drift velocity at the zero bias voltage. Consequently, in this case, all parameters in Equation (40) are unchanged.…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

“…This means that the aforementioned electric field reduction at the active region elongation does not lead to the notable change of carrier drift velocity (see Figure 2a,b). According to Equation (40), if the carrier drift velocity is constant, the increase in the length of the active region results in the proportional tr t growth. That is why the response time of the p-i-n photodetector with the extended active region is longer than the response time of the device with the short one.…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

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Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections

Pisarenko

Ryndin

2016

Electronics

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Abstract:In this paper, we consider the problem of the research and development of high-speed semiconductor photodetectors suitable for operation as parts of on-chip optical interconnections together with the high-speed laser modulators based on the A III B V nanoheterostructures. This research is aimed at the development of the models and modelling aids designed for the simulation of carrier transport and accumulation processes taking place in on-chip photosensitive devices during the detection of subpicosecond laser pulses. Another aim of the paper is to apply the aforementioned aids for the investigation of GaAs p-i-n and Schottky-barrier photodiodes. We propose the non-stationary drift-diffusion models, an original numerical simulation technique and the applied software allowing one to simulate the photosensitive devices with different electrophysical, constructive and technological parameters. We have taken into account different kinds of carrier generation and recombination processes, the effects of electron intervalley transition and carrier drift velocity saturation in order to improve the simulation results' adequacy. We have concluded that the influence of these effects on the performance of photodetectors for on-chip optical interconnections is significant. The response time of GaAs p-i-n and Schottky-barrier photodiodes calculated taking into account the drift velocity dependence on electric field intensity is insufficient for the adequate detection of subpicosecond laser pulses. According to the simulation results, it is reasonable to develop the methods aimed at the increase in the drift velocity of charge carriers in the photodetector active region by means of built-in electric field reduction.

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Section: Models and Simulation Methodssupporting

confidence: 72%

Section: Simulation Results and Discussionmentioning

confidence: 99%

Section: Simulation Results and Discussionmentioning

confidence: 99%

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Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections

Pisarenko

Ryndin

2016

Electronics

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“…The overestimation results from the failure to satisfy four conditions simultaneously in a parabolic curve (Pozela 1980); (---) modified two-piece velocity approximation (Rohdin and Roblin 1986);(6) parabolic curve approximation .…”

Section: E~ementioning

confidence: 98%

“…A comparison between the predictions of the new model with the Monte Carlo simulation results (Pozela 1980), the parabolic model and the modified two-piece model (Rohdin and Roblin 1986) is given in Fig. 1 dimensional electron gas velocity characteristic as suggested by Drummond et al (1982).…”

Section: E~ementioning

confidence: 98%

MODFET DC model based on a new velocity-electric field characteristic

Xia

Nokali

1991

International Journal of Electronics

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On the ?-Particle Irradiation Effects in MESFETs

Papastamatiou

Arpatzanis

Papaioannou

et al. 2000

phys. stat. sol. (a)

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a-particle irradiation investigations have been carried out on various structure GaAs metal±semiconductor field-effect transistors. The device characteristics were measured before irradiation and after a-particle irradiation with fluences ranging from 5 Â 10 10 to 3 Â 10 12 cm ± ±2 . The carrier removal rate was found to be independent of the doping level as determined from Schottky diodes and device parameters. Five traps were found to be introduced by irradiation. Two of them were found to determine the temperature dependence of drain current. The threshold voltage shift was modeled taking into account the degradation of the channel carrier removal, the gate barrier height and the channel±substrate space charge region width.

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Electron transport properties in GaAs at high electric fields

Cited by 148 publications

References 15 publications

Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections

Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections

MODFET DC model based on a new velocity-electric field characteristic

On the ?-Particle Irradiation Effects in MESFETs

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