Volatile memory devices relying on the Mott-type insulator-to-metal
transition of vanadium oxide (VO2) are widely utilized
in the field of neuromorphic computing. Such devices, however, are
realized in a nanoscale geometry, where the switching relies on the
self-heating of an ultrasmall spot as well as the presence of extremely
high electric fields in the active region. In this paper, we investigate
the interplay of such nanoscale thermal and nonlinear electronic phenomena
by investigating the temperature and voltage dependent conduction
properties of our custom-designed VO2 devices, where a
V-shaped electrode focuses the switching to an ultrasmall single-spot
active region. This simplified spatial structure of the active volume
facilitates the device modeling and the identification of physical
mechanisms behind the phase transition. We find that purely thermal
or electronic effects fail to describe the device operation, however,
according to our finite element simulations, a combined electronic
and thermal model provides a precise description of the device characteristics.
These results facilitate the understanding as well as the thermal
and electronic design of novel VO2-based neuronal devices.