Electronic Band Structure of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>GaN</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mi mathvariant="normal">P</mml:mi></mml:mrow><mml:mrow><mml:mi>y</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mi>As</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi><mml:mo>−</mml:mo><mml:mi>y</mml:mi></mml:mrow></mml:msub></mml:

Kudrawiec, R.; Luce, Alexander; Gładysiewicz, M.; Min, Ting; Kuang, Y. J.; Tu, C. W.; Dubón, O. D.; Yu, K. M.; Walukiewicz, W.

doi:10.1103/physrevapplied.1.034007

Cited by 76 publications

(57 citation statements)

References 45 publications

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“…[19]) if the band properties exhibited when inserted in the QD structures shown in this paper (not null density of states between the IB and the CB) prevail in bulk structures. More recent calculations of the density of states between the IB and the CB of GaAsN are in line with this interpretation [27]. In our results, the energy difference between its VB and the lower energy CB, E -(and not E + ), limits the quasi-Fermi Level (QFL) split and restricts the output voltage of the cell to values equal or lower than E H /q, where q is the electron charge.…”

Section: Discussionsupporting

confidence: 67%

Voltage limitation analysis in strain-balanced InAs/GaAsN quantum dot solar cells applied to the intermediate band concept

Linares

López

Ramiro

et al. 2015

Solar Energy Materials and Solar Cells

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IBSCs. In these cells, the dilute nitrogen in the barrier plays an important role for the strain-balance (SB) of the QD layer region that would otherwise create dislocations under the effect of the accumulated strain. The introduction of GaAsN SB layers allows increasing the light absorption in the QD region by multi-stacking more than 100 QD layers. The photo-generated current density (J L ) versus V OC was measured under varied concentrated light intensity and temperature. We found that the V OC of the cell at 20K is limited by the bandgap of the GaAsN barriers, which has important consequences regarding IBSC bandgap engineering that are also discussed in this work.

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Section: Discussionsupporting

confidence: 67%

Voltage limitation analysis in strain-balanced InAs/GaAsN quantum dot solar cells applied to the intermediate band concept

Linares

López

Ramiro

et al. 2015

Solar Energy Materials and Solar Cells

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“…This is due to the high radiative efficiency and the possibility of lattice matching with GaP [4], and more particularly with Si substrates [5,6]. Although the incorporation of N into GaAsP was found to be at the origin of its excellent optical emission properties [9][10][11], the optical absorption properties of this alloy have not yet being studied in detail for compositions of interest for tandem solar cell development [12]. Moreover, while the thermal conductivities of the GaAsP and GaAsN alloys have been measured [13,14], the GaAsPN thermal properties have not yet been determined, despite its obvious importance for heat dissipation during photovoltaic conversion.…”

Section: Introductionmentioning

confidence: 98%

Optical absorption and thermal conductivity of GaAsPN absorbers grown on GaP in view of their use in multijunction solar cells

Ilahi

Almosni

Chouchane

et al. 2015

Solar Energy Materials and Solar Cells

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International audienceThe optical absorption and thermal conductivity of GaAsPN absorbers are investigated by means of optical absorption spectroscopy and photo-thermal deflection spectroscopy (PDS) for different 100 nm-thick GaAsNP/GaP samples under different growth conditions and various post-growth annealing temperatures. It is first shown that the As content strongly modifies the optical absorption spectrum of the GaAsPN: with a maximum absorption coefficient of 38,000 cm À 1 below the GaP bandgap energy. The optical absorption and thermal conductivities of the samples are then evaluated for various growth and annealing conditions using PDS: the results showing overall agreement with optical absorption spec-troscopy measurements. A significant improvement in optical absorption and thermal conductivity after annealing is demonstrated. The best thermal conductivity measured is equal to 4 W/m K. These results are promising for the development of absorbers in multijunction solar-cell architecture

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“…Since Weyers' [1] and Kondow's [2] discoveries of the large bandgap bowing parameters of dilute nitride Ga(In)NAs, it has spurred intensive research on dilute nitride materials beyond telecommunication over a wide spectrum: theories to explain the uncommon properties of its class [3], advanced technique to grow dilute nitrides [4], band structure engineering for light emitting diode [5][6][7], density of states engineering for thermoelectrics [8,9], infrared photodetectors [10], next generation solar cells [11][12][13] _ENREF_9, integration of III-V on silicon [14][15][16][17], defect engineering [18,19] and so forth.…”

Section: Introductionmentioning

confidence: 99%

Silicon dopant passivation by nitrogen during molecular beam epitaxy of GaNAs

Kuang

2015

Appl. Phys. A

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We have studied the Si doping efficiency in dilute nitride GaNAs by gas-source molecular beam epitaxy across a substrate temperature range from 460 to 570°C. Particularly, for samples grown at *480°C, the doping efficiency changes drastically from 100 to almost 0 % as the N compositions varies from 0 to 3.1 %. By comparing experimental data to Monte Carlo simulation of N adatom surface diffusion during growth, the change in doping efficiency is believed to be due to passivation of Si dopants by N during epitaxy.

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Electronic Band Structure ofGaNxPyAs1−x−y

Cited by 76 publications

References 45 publications

Voltage limitation analysis in strain-balanced InAs/GaAsN quantum dot solar cells applied to the intermediate band concept

Voltage limitation analysis in strain-balanced InAs/GaAsN quantum dot solar cells applied to the intermediate band concept

Optical absorption and thermal conductivity of GaAsPN absorbers grown on GaP in view of their use in multijunction solar cells

Silicon dopant passivation by nitrogen during molecular beam epitaxy of GaNAs

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