2022
DOI: 10.1002/admi.202201339
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Electronic Characteristics of Ultra‐Thin Passivation Layers for Silicon Photovoltaics

Abstract: on PERC technologies and get even closer to the theoretical single-junction efficiency limit, electrical losses in the contacted regions must be reduced. [3][4][5] Passivating contacts can help alleviate such losses by simultaneously suppressing the current of non-collected carriers to the contact, and by reducing recombination sites at the interface. Introducing a passivating interlayer between the metal/silicon interface provides a route to reducing the recombination current density, J 0 , [6,7] thereby incr… Show more

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Cited by 26 publications
(26 citation statements)
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“…HfO 2 has the potential to become a useful passivation layer for photovoltaics as it can be grown by established ALD processes and can have either positive or negative charge polarity [7], [8], [9], [10], [11], [12], [13]. The benefits of HfO 2 as a passivation layer are especially apparent for ultrathin films below 5 nm, where it has been shown to outperform Al 2 O 3 [14]. This advantage suggests a potential application for HfO 2 films in passivating contact structures.…”
mentioning
confidence: 99%
“…HfO 2 has the potential to become a useful passivation layer for photovoltaics as it can be grown by established ALD processes and can have either positive or negative charge polarity [7], [8], [9], [10], [11], [12], [13]. The benefits of HfO 2 as a passivation layer are especially apparent for ultrathin films below 5 nm, where it has been shown to outperform Al 2 O 3 [14]. This advantage suggests a potential application for HfO 2 films in passivating contact structures.…”
mentioning
confidence: 99%
“…To determine the viability of Al 2 O 3 capping layers for nanolayer HfO 2 , three film structures were deposited at 200 °C onto 5 Ω cm 125–150 μm thick n -type Cz silicon wafers: (1) 1 nm HfO 2 (10 ALD cycles, denoted Si/HfO 2 . The growth rate of HfO 2 under the conditions used in this work was characterised in our previous work 13 ); (2) 1 nm HfO 2 capped with 30 nm Al 2 O 3 (250 ALD cycles, denoted Si/HfO 2 /Al 2 O 3 ); and (3) 30 nm Al 2 O 3 (denoted Si/Al 2 O 3 ). Samples were annealed (“activated”) in air ambient in a tube furnace at temperatures between 350–600 °C for 30 min to improve the passivation.…”
Section: Resultsmentioning
confidence: 99%
“…7 Al 2 O 3 passivates extremely well when relatively thick (>10 nm) but passivates poorly when thin (<1 nm). 13 There is a strong motivation to develop dielectrics with thicknesses at the single nanometre scale which also passivate well for new passivating contact structures.…”
Section: Introductionmentioning
confidence: 99%
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“…While Kaur achieved a significantly lower J0 of 12.8 fA/cm 2 for ALD AlOx hole contact using a n-type wafer with a boron diffusion from a p + poly-Si [34] and 40 fA/cm 2 for an LPCVD SiNx on an n-type wafer before poly-Si deposition [36]. DFPCs incorporating AlOx into a dielectric stack have so far achieved an SRV of 20 cm/s [76] and J0 of 580 fA/cm 2 [75], while single AlOx nanolayers have reached 100 fA/cm 2 with just 10 ALD cycles [77]. From the small collection of work on AlOx and SiNx nanolayers, it can be seen that both can provide reasonable passivation, while maintaining low resistivity, however, a J0 as low as 2 fA/cm 2 is required to match that achieved for SiOx p-type poly-Si contacts.…”
Section: Discussionmentioning
confidence: 99%