Electronic conduction and switching in chalcogenide glasses

Owen, A.E.; Robertson, John M.

doi:10.1109/t-ed.1973.17617

Cited by 120 publications

(64 citation statements)

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“…The electrical switching in glassy chalcogenides has been explained based on electronic [2,3], thermal or electro-thermal mechanisms [4][5][6][7]. It is generally accepted that in both threshold and memory switching glasses, the onset of switching is electronic in nature, involving charged defect states known as Valence Alternation Pairs (VAPs).…”

Section: Introductionmentioning

confidence: 99%

Electrical switching studies on Ge–Te–Tl chalcogenide glasses: Effect of thallium on the composition dependence of switching voltages

Rahman¹,

Rukmani²,

Asokan³

2011

Journal of Non-Crystalline Solids

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Bulk Ge 17 Te 83−x Tl x glasses (0 ≤ x ≤ 13), have been found to exhibit memory type electrical switching. The switching voltages (also known as threshold voltage -V th ) of Ge 17 Te 83−x Tl x glasses are found to decrease with increasing thallium content. The rate of decrease of V th is greater at lower concentrations and V th falls at a slower rate for higher thallium concentrations (x ≥ 6). The addition of thallium to the Ge-Te network fragments the covalent network and introduces ionic nature to it; the reduction in network connectivity leads to the decrease in switching voltages with thallium content. The decrease in the glass transition temperatures of Ge 17 Te 83−x Tl x glasses with increasing thallium concentration supports the idea of decrease in network connectivity with Tl addition. The more metallic nature of Tl also contributes to the observed reduction in the switching voltages of Ge 17 Te 83−x Tl x glasses with Tl content. Further, there is an interesting correlation seen between the threshold voltage V th and the average bond energy, as a function of Tl content. In addition, the switching voltages of Ge 17 Te 83−x Tl x glasses have been found to decrease with sample thickness almost linearly. The set-reset studies indicate that the Ge 17 Te 81 Tl 2 sample can be switched for more than 10 cycles, whereas other glasses could not be reset beyond two switching cycles.

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Section: Introductionmentioning

confidence: 99%

Electrical switching studies on Ge–Te–Tl chalcogenide glasses: Effect of thallium on the composition dependence of switching voltages

Rahman¹,

Rukmani²,

Asokan³

2011

Journal of Non-Crystalline Solids

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“…This inherent trade-off between the relative permittivity and the breakdown field, or similarly the bandgap, 54 remains elusive; it has been explained as a chargedetrapping process in a dielectric film under bias.…”

Section: Dielectric Propertiesmentioning

confidence: 99%

Atmospheric Pressure Plasma Enhanced Spatial ALD of ZrO₂for Low-Temperature, Large-Area Applications

Mione

Katsouras

Creyghton

et al. 2017

ECS J. Solid State Sci. Technol.

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High permittivity (high-k) materials have received considerable attention as alternatives to SiO 2 for CMOS and low-power flexible electronics applications. In this study, we have grown high-quality ZrO 2 by using atmospheric-pressure plasma-enhanced spatial ALD (PE-sALD), which, compared to temporal ALD, offers higher effective deposition rates and uses atmospheric-pressure plasma to activate surface reactions at lower temperatures. We used tetrakis(ethylmethylamino)zirconium (TEMAZ) as precursor and O 2 plasma as co-reactant at temperatures between 150 and 250 • C. Deposition rates as high as 0.17 nm/cycle were achieved with N-and C-contents as low as 0.4% and 1.5%, respectively. Growth rate, film crystallinity and impurity contents in the films were found to improve with increasing deposition temperature. The measured relative permittivity lying between 18 and 28 with leakage currents in the order of 5 × 10 −8 A/cm 2 demonstrates that atmospheric PE-sALD is a powerful technique to deposit ultrathin, high-quality dielectrics for low-temperature, large-scale microelectronic applications. The continuous improvement in performance of integrated circuits has been based on miniaturization of components. The effective gate length in field-effect transistors shrinks to smaller and smaller sizes and, consequently, the thickness of the gate oxide decreases.1 SiO 2 has been the most popular gate oxide material used in microelectronic manufacturing due to its thermal stability and ideal interface quality on Si. However, during the past fifty years the thickness of the SiO 2 gate oxide has already been reduced to its physical limit of 1.2 nm, below which a critical gate leakage of 1 A/cm 2 is exceeded. 2 To overcome this problem, dielectrics with a high permittivity (high-k materials) have been extensively investigated as promising substitutes of the conventional SiO 2 for CMOS and DRAM technology. The high permittivity (k > 10) ensures high capacitance for thicker gate oxide layers while greatly reducing tunneling and gate leakage currents. 3,4 Among high-k oxides, ZrO 2 is considered one of the most promising SiO 2 alternatives due to its high dielectric constant (k = 20-25), large bandgap (5.1-7.8 eV) and thermodynamical stability. 5,6 ZrO 2 proved to be a good dielectric in transistor applications with leakage current of the order of 10 −6 -10 −9 A/cm 2 and in DRAM capacitor applications especially when present in ZrO 2 /Al 2 O 3 /ZrO 2 nanolaminate structures.7 High-k materials are also relevant for low-power applications of flexible electronics. 5,8-11High-k materials are deposited in a variety of chemical and physical deposition techniques including metallorganic chemical vapor deposition (MOCVD), atomic layer deposition (ALD), sol-gel and sputtering. ALD has proven to be the most suitable technique for high-k deposition due to its unique nanoscale thickness and layer uniformity control. In its conventional time-sequenced mode, ALD is a gas phase deposition technique in which the substrate surface is exposed altern...

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“…The proposed model [7] for ZnO based threshold switching materials to be tested in the initial stage of this study is based on a combination of the model for the electrical behavior of ZnO varistors [55] and the double injection model for the behavior of amorphous semiconductors [23]. In this composite model, switching ceramics must Since the fields in the two depletion layers are maintained, the injection of holes and electrons continues, permitting the material to be maintained in the 'on' state with a reduced overall field.…”

Section: Initial Model For Threshold Switchingmentioning

confidence: 99%

“…On the other hand, electronic models propose that the switching process is entirely due to alterations in the distribution of electron energies. One electronic model [23], known as the double injection model, describes the switching mechanism as follows (see Figure 4. A double injection model [23].…”

Electronic conduction and switching in chalcogenide glasses

Cited by 120 publications

References 1 publication

Electrical switching studies on Ge–Te–Tl chalcogenide glasses: Effect of thallium on the composition dependence of switching voltages

Electrical switching studies on Ge–Te–Tl chalcogenide glasses: Effect of thallium on the composition dependence of switching voltages

Atmospheric Pressure Plasma Enhanced Spatial ALD of ZrO₂for Low-Temperature, Large-Area Applications

Electrical switching of some zinc oxide based ceramics

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Electronic conduction and switching in chalcogenide glasses

Cited by 120 publications

References 1 publication

Electrical switching studies on Ge–Te–Tl chalcogenide glasses: Effect of thallium on the composition dependence of switching voltages

Electrical switching studies on Ge–Te–Tl chalcogenide glasses: Effect of thallium on the composition dependence of switching voltages

Atmospheric Pressure Plasma Enhanced Spatial ALD of ZrO2for Low-Temperature, Large-Area Applications

Electrical switching of some zinc oxide based ceramics

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Atmospheric Pressure Plasma Enhanced Spatial ALD of ZrO₂for Low-Temperature, Large-Area Applications