Electronic devices fabricated at CMOS backend-compatible temperatures

Abstract

Cover: illustration of the main process steps described in the dissertation: green-laser crystallization of preformed a-Si film and deposition of functional multilayer stack (SiO 2 , Si-nanodots, Al 2 O 3 , Al-metallization).Cover design: Oleg Vorobyov

Nanolink-based thermal devices : integration of ALD tin thin films

“…Van der Pauw [68] showed that, if (i) the contacts are sufficiently small (point-like), (ii) the sample material is homogeneous in thickness, (iii) the contacts are at the circumference of the sample and (iv) the surface is singly connected (does not contain isolated holes), then R 12,34 and R 41,23 are related by 12,34 41,23 exp(…”

“…where F is a function only of the ratio R r = R 12,34 /R 41,23 , satisfying the relation 4.532 ln (2) tR tR…”

“…Both PVD and ALD TiN layers are available in the MESA+ Nanolab and can be used for the deposition of thin (100 nm) and ultra-thin (sub 10 nm) films, respectively. Furthermore, both deposition techniques allow the deposition at temperatures compatible with CMOS post-processing (< 450 ºC [41]. )…”

“…It has a temperature coefficient of resistance (TCR) in the range of 5-20×10 -4 /ºC for sputtered films [54], while for ALD films values of 5.5×10 -4 /ºC are reported [53]. It can be patterned using wet chemical etching in a hydrogen peroxide-ammonia solution (H 2 O 2 + NH 4 OH +H 2 O [41]) or by plasma etching in a chlorine based plasma [43,47]. Both PVD and ALD TiN layers are available in the MESA+ Nanolab and can be used for the deposition of thin (100 nm) and ultra-thin (sub 10 nm) films, respectively.…”

“…Furthermore, it allows integration of SMAs with other devices, such as reference sensors [4], control electronics [17] or even a sensor array [3,16,40]. Processing should be carried out at temperatures below 450 ºC [41] to enable fabrication of SMAs on top of prefabricated CMOS chips via post-processing [42], for further reduction of the fabrication costs.…”