Electronic interfaces to silicon photonics

Lentine, Anthony L.; Cox, James C.; Zortman, William A.; Savignon, Daniel J.

doi:10.1117/12.2045696

Cited by 4 publications

(3 citation statements)

References 40 publications

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“…Achieving low energy consumption in the receiver requires small photodiodes and high transimpedances to allow for small transistors and few stages in amplifying the input signal to logic level [33,34]. When integrated with a simple high transimpedance amplifier, we have simulated 10 Gbps receivers generating logic level outputs with -20dB average power inputs with energies below 3 fJ/bit using a 45 nm technology node.…”

Section: Receiversmentioning

confidence: 99%

Silicon photonics platform for national security applications

Lentine

DeRose

Davids

et al. 2015

2015 IEEE Aerospace Conference

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We review Sandia's silicon photonics platform for national security applications. Silicon photonics offers the potential for extensive size, weight, power, and cost (SWaP-c) reductions compared to existing III-V or purely electronics circuits. Unlike most silicon photonics foundries in the US and internationally, our silicon photonics is manufactured in a trusted environment at our Microsystems and Engineering Sciences Application (MESA) facility. The Sandia fabrication facility is certified as a trusted foundry and can therefore produce devices and circuits intended for military applications. We will describe a variety of silicon photonics devices and subsystems, including both monolithic and heterogeneous integration of silicon photonics with electronics, that can enable future complex functionality in aerospace systems, principally focusing on communications technology in optical interconnects and optical networking.

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Section: Receiversmentioning

confidence: 99%

Silicon photonics platform for national security applications

Lentine

DeRose

Davids

et al. 2015

2015 IEEE Aerospace Conference

Self Cite

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“…A fairly simple analysis can show that approximately 0.25°C temperature control is needed for a 1dB power penalty out of a typical ring or disk modulator 99 . For a ringbased optical mux or demux, the tolerance can be much greater (>1 °C), and it depends on the channel spacing, acceptable crosstalk (power penalty), and acceptable pass band channel characteristics.…”

Section: Research Paths For Non-resonant Optical Modulators Compatiblmentioning

confidence: 99%

Trends in Microfabrication Capabilities & Device Architectures.

Bauer

Jones

Lentine

et al. 2015

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The last two decades have seen an explosion in worldwide R&D, enabling fundamentally new capabilities while at the same time changing the international technology landscape. The advent of technologies for continued miniaturization and electronics feature size reduction, and for architectural innovations, will have many technical, economic, and national security implications. It is important to anticipate possible microelectronics development directions and their implications on US national interests. This report forecasts and assesses trends and directions for several potentially disruptive microfabrication capabilities and device architectures that may emerge in the next 5-10 years.

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“…A fairly simple analysis can show that approximately 0.25°C temperature control is needed for a 1dB power penalty out of a typical ring or disk modulator 92 . For a ringbased optical mux or demux, the tolerance can be much greater (>1 °C), and it depends on the channel spacing, acceptable crosstalk (power penalty), and acceptable pass band channel characteristics.…”

Section: Research Paths For Non-resonant Optical Modulators Compatiblmentioning

confidence: 99%