Electronic properties of a dual-gated GNR-FET under uniaxial tensile strain

Moslemi, Mohammad Reza; Sheikhi, Mohammad Hossein; Saghafi, Kamyar; Moravvej-Farshi, Mohammad Kazem

doi:10.1016/j.microrel.2012.05.009

Cited by 25 publications

(19 citation statements)

References 35 publications

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“…To decrease the computational cost of the simulations, the mode space approach is used. This method enables us to decouple the two-dimensional problem into onedimensional decoupled lattices, which reduce the size of the problem in comparison with the real-space mode [6,11].…”

Section: Implementation Methodsmentioning

confidence: 99%

“…Therefore, Graphene nanoribbons are being as a promising candidate for the next generation of transistors, specifically as the channel for transistors, because of their excellent transport properties [5,6]. Transistors made of GNRs are called Graphene-Nano-Ribbon Field Effect Transistors (GNRFETs), which have been explored in recent studies as potential alternatives to CMOS devices [1].…”

Section: Introductionmentioning

confidence: 99%

“…In order to simulate the device characteristics; we solve the Schrö-dinger equation coupled with the Poisson equation in the ballistic regime, using the NEGF in a mode space representation. We employ the tight-binding method in our study [6]. The results are investigated and compared with the conventional structures of GNRFET.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A novel graphene nanoribbon field effect transistor with two different gate insulators

Eshkalak

Faez

Haji-Nasiri

2015

Physica E: Low-dimensional Systems and Nanostructures

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Section: Implementation Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A novel graphene nanoribbon field effect transistor with two different gate insulators

Eshkalak

Faez

Haji-Nasiri

2015

Physica E: Low-dimensional Systems and Nanostructures

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“…There are the uncountable amount of applications which needs ideally free-defect single-layer graphene or free-defect multilayer graphene film and no need for the appearance of bandgap such as a flexible display, touch panel, solar cell, fuel cell, etc. Depending on the types of defects such as disorder [30], doping [31], external field [32], mechanical strain [33][34][35][36][37] etc, it could be contributing to host material (e.g. graphene) as useful (increase the conductivity, mobility, work function) or harmful (decrease the conductivity, mobility, work function) [38].…”

Section: Graphene Etching: How Could It Be Etched?mentioning

confidence: 99%

Graphene Etching: How Could It Be Etched?

Pham

2018

CGS

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Background: A new nanomaterial species called "graphene" has been of great interest owing to its outstanding mechanical, thermal, chemistry, and physical characteristics. The etching either directly from chemical vapor deposition growth process or plasma technology process has been emerging as attracting research topic in achieving the thinner graphene layer and cleaner surface in order to improve their electronics and optoelectronics. The resided impurities and the high roughness surface are because of the nature of graphenes induced in deteriorating the performance. Removal of the impurities by surface cleaning or plasma-related graphene etching through the layer-by-layer thinning method as a top-down lithography. In particular, new plasma-based graphene etching is freedamage while maintaining its π-binding, which affects its conductivity. Objective: This mini-review will address the latest progress related to graphene etching technology based on emerging strategies. From here, it might be adopted in the etching of other nanomaterials.

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“…In Fiori and Iannaccone, a spatially periodically distributed strains is shown through first‐principle calculations to be able to modify the energy gap of nanoribbons to overcome technological limitations currently encountered in the fabrication of large‐gap devices. Other works have been focused on the effect of strains on nanoribbons through first‐principle formulation, a very powerful method indeed, but not quite flexible and efficient to perform parametric studies of an entire transistor or to optimize a group of them.…”

Section: Introductionmentioning

confidence: 99%

Effect of mechanical stresses on graphene‐based devices

Zheng

Valerio

Ren

2017

Int J Numerical Modelling

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In this work, we analyse the effect of mechanical stresses on graphene devices for application in flexible electronics. The possible Schottky contacts in the transistor are modeled through suitable transmission coefficients describing the tunnelling through the electrostatic potential along the graphene channel. The surface potential is determined by imposing an equality between the charges computed with a micromodel and a macromodel. All these computation tools are explicitly dependent on the choice of geometrical parameters, thus allowing the description of uniform geometrical deformations due to strains along a given direction. Numerical results are computed and discussed.

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Electronic properties of a dual-gated GNR-FET under uniaxial tensile strain

Cited by 25 publications

References 35 publications

A novel graphene nanoribbon field effect transistor with two different gate insulators

A novel graphene nanoribbon field effect transistor with two different gate insulators

Graphene Etching: How Could It Be Etched?

Effect of mechanical stresses on graphene‐based devices

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