Electronic Properties of a-SiO&lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;${}_{x}$&lt;/tex-math&gt; &lt;/inline-formula&gt;N&lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;${}_{y}$&lt;/tex-math&gt; &lt;/inline-formula&gt;:H/SiN&lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;${}_{x}$&lt;/tex-math&gt; &lt;/inline-formula&gt; Stacks for Surface Passivation of P-Type Crystalline Si Wafers

Cheng, Xuemei; Haug, Halvard; Sabatino, Marisa Di; Zhu, Jiejie; Marstein, Erik Stensrud

doi:10.1109/jphotov.2016.2581421

Cited by 7 publications

(5 citation statements)

References 25 publications

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“…Similar preliminary findings in the same system were previously reported by Zhu et al . Work of Cheng et al also found that the chemical passivation component played a more important role after firing the SiON/SiN x stack, and similar stability and passivation effectiveness was shown. Hallam et al showed that the passivation provided by SiON was strongly dependent on it composition, with low NH bond density providing optimal results.…”

Section: Materials and Methods For Silicon Surface Passivationsupporting

confidence: 89%

Dielectric surface passivation for silicon solar cells: A review

Bonilla

Hoex

Hamer

et al. 2017

Physica Status Solidi (a)

235

161

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This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.Silicon wafer solar cells continue to be the leading photovoltaic technology, and in many places are now providing a substantial portion of electricity generation. Further adoption of this technology will require processing that minimises losses in device performance. A fundamental mechanism for efficiency loss is the recombination of photo-generated charge carriers at the unavoidable cell surfaces. Dielectric coatings have been shown to largely prevent these losses through a combination of different passivation mechanisms. This review aims to provide an overview of the dielectric passivation coatings developed in the past two decades using a standardised methodology to characterise the metrics of surface recombination across all techniques and materials. The efficacy of a large set of materials and methods has been evaluated using such metrics and a discussion on the current state and prospects for further surface passivation improvements is provided.

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Section: Materials and Methods For Silicon Surface Passivationsupporting

confidence: 89%

Dielectric surface passivation for silicon solar cells: A review

Bonilla

Hoex

Hamer

et al. 2017

Physica Status Solidi (a)

235

161

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“…Gettering can be used to introduce sinks for fast diffusing metallic impurities, such as Fe, Ni, or Cu, into the noncritical parts of the device . A subsequent technique in the solar cell production chain, hydrogen passivation or hydrogenation for short, passivates part of the metallic impurities and dangling bonds of the crystal lattice near structural defects, resulting in an increased minority carrier lifetime …”

Section: Introductionmentioning

confidence: 99%

Recombination Strength of Dislocations in High‐Performance Multicrystalline/Quasi‐Mono Hybrid Wafers During Solar Cell Processing

Adamczyk

Søndenå

You

et al. 2017

Physica Status Solidi (a)

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Wafers from a hybrid silicon ingot seeded in part for High Performance Multicrystalline, in part for a quasi‐mono structure, are studied in terms of the effect of gettering and hydrogenation on their final Internal Quantum Efficiency. The wafers are thermally processed in different groups – gettered and hydrogenated. Afterwards, a low temperature heterojunction with intrinsic thin layer cell process is applied to minimize the impact of temperature. Such procedure made it possible to study the effect of different processing steps on dislocation clusters in the material using the Light Beam Induced Current technique with a high spatial resolution. The dislocation densities are measured using automatic image recognition on polished and etched samples. The dislocation recombination strengths are obtained by a correlation of the IQE with the dislocation density according to the Donolato model. Different clusters are compared after different process steps. The results show that for the middle of the ingot, the gettering step can increase the recombination strength of dislocations by one order of magnitude. A subsequent passivation with layers containing hydrogen can lead to a decrease in the recombination strength to levels lower than in ungettered samples.

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“…Agglomeration and percolation effects, which could be caused when using a high concentration of nanoparticles in the composite, would induce a worsening of the passivation properties of the composite. In the present work, the largest charge carrier lifetime achieved in this work by using SnO 2 nanoparticles in the composite is smaller than typical values for commonly used passivation layers, such as τ=2.41 ms [23,24] obtained by passivation with the stack a-SiO x N y :H/SiN x . However, that stack is deposited by PECVD whereas the deposition process used in this work is low cost, easy, fast, and there is still room for further enhancement of the lifetime.…”

Section: Si Surface Passivationmentioning

confidence: 52%

Silicon surface passivation by PEDOT: PSS functionalized by SnO₂and TiO₂nanoparticles

et al. 2017

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In this paper, we present a study of silicon surface passivation based on the use of spin-coated hybrid composite layers. We investigate both undoped poly(3,4-ethylenedioxythiophene)/poly-(styrenesulfonate) (PEDOT:PSS), as well as PEDOT:PSS functionalized with semiconducting oxide nanomaterials (TiO and SnO). The hybrid compound was deposited at room temperature by spin coating-a potentially lower cost, lower processing time and higher throughput alternative compared with the commonly used vacuum-based techniques. Photoluminescence imaging was used to characterize the electronic properties of the Si/PEDOT:PSS interface. Good surface passivation was achieved by PEDOT:PSS functionalized by semiconducting oxides. We show that control of the concentration of semiconducting oxide nanoparticles in the polymer is crucial in determining the passivation performance. A charge carrier lifetime of about 275 μs has been achieved when using SnO nanoparticles at a concentration of 0.5 wt.% as a filler in the composite film. X-ray diffraction (XRD), scanning electron microscopy, high resolution transmission electron microscopy (HRTEM), energy dispersive x-ray in an SEM, and μ-Raman spectroscopy have been used for the morphological, chemical and structural characterization. Finally, a simple model of a photovoltaic device based on PEDOT:PSS functionalized with semiconducting oxide nanoparticles has been fabricated and electrically characterized.

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Cited by 7 publications

References 25 publications

Dielectric surface passivation for silicon solar cells: A review

Dielectric surface passivation for silicon solar cells: A review

Recombination Strength of Dislocations in High‐Performance Multicrystalline/Quasi‐Mono Hybrid Wafers During Solar Cell Processing

Silicon surface passivation by PEDOT: PSS functionalized by SnO₂and TiO₂nanoparticles

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Cited by 7 publications

References 25 publications

Dielectric surface passivation for silicon solar cells: A review

Dielectric surface passivation for silicon solar cells: A review

Recombination Strength of Dislocations in High‐Performance Multicrystalline/Quasi‐Mono Hybrid Wafers During Solar Cell Processing

Silicon surface passivation by PEDOT: PSS functionalized by SnO2and TiO2nanoparticles

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Silicon surface passivation by PEDOT: PSS functionalized by SnO₂and TiO₂nanoparticles