“…The epitaxic growth of/3-FeSi z thin films on silicon has been performed by several authors (Cheng, Yew & Chen, 1985;Cherief, D'Anterroches, Cinti, Nguyen Tan & Derrien, 1989;Mahan et al, 1990;review article: Derrien, Chevrier, Le Thanh & Mahan, 1991). Furthermore, fl-FeSi2 is a semiconductor with a direct gap of about 0.9 eV (Bost & Mahan, 1985;Dimitriadis et al, 1990). This property makes fl-FeSi z a very good candidate for micro-optoelectronic applications.…”