1990
DOI: 10.1063/1.346601
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Electronic properties of semiconducting FeSi2 films

Abstract: Polycrystalline iron disilicide thin films are prepared by furnace annealing of electron-beam deposited iron layers. As substrates we use single-crystal silicon wafers, epitaxial silicon thin films on sapphire substrates, and low-pressure chemical vapor deposited polycrystalline silicon thin films on oxidized silicon wafers. X-ray diffraction indicates that orthorhombic β-FeSi2 is obtained for growth temperatures in the range 800–900 °C. Photothermal deflection spectroscopy reveals a direct band-gap of 0.85 eV… Show more

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Cited by 263 publications
(89 citation statements)
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“…The epitaxic growth of/3-FeSi z thin films on silicon has been performed by several authors (Cheng, Yew & Chen, 1985;Cherief, D'Anterroches, Cinti, Nguyen Tan & Derrien, 1989;Mahan et al, 1990;review article: Derrien, Chevrier, Le Thanh & Mahan, 1991). Furthermore, fl-FeSi2 is a semiconductor with a direct gap of about 0.9 eV (Bost & Mahan, 1985;Dimitriadis et al, 1990). This property makes fl-FeSi z a very good candidate for micro-optoelectronic applications.…”
Section: Introductionmentioning
confidence: 98%
“…The epitaxic growth of/3-FeSi z thin films on silicon has been performed by several authors (Cheng, Yew & Chen, 1985;Cherief, D'Anterroches, Cinti, Nguyen Tan & Derrien, 1989;Mahan et al, 1990;review article: Derrien, Chevrier, Le Thanh & Mahan, 1991). Furthermore, fl-FeSi2 is a semiconductor with a direct gap of about 0.9 eV (Bost & Mahan, 1985;Dimitriadis et al, 1990). This property makes fl-FeSi z a very good candidate for micro-optoelectronic applications.…”
Section: Introductionmentioning
confidence: 98%
“…Dimitriadis et al [31] studied polycrystalline iron disilicide thin films which were prepared by furnace annealing of electron-beam deposited iron layers. PL measurements were taken at liquid helium temperature (1.8 K) to thin films grown on single crystal substrates at temperatures of 800 ®C, 850 and 900 ^C.…”
Section: Iron Disilicidementioning
confidence: 99%
“…The unit cell has two inequivalent Fe sites, each occupied by 8 atoms as well as two inequivalent Si sites with 16 atoms in each. Even though there is no simple lattice parameter match, epitaxial layers of ␤-FeSi 2 can be grown easily on Si͑001͒ and Si͑111͒ substrates using a variety of techniques such as, molecular beam epitaxy, 4 chemical vapor deposition, 5 electron beam deposition, 6 and metal-organic vapor phase epitaxy. 7 Buried epilayer of the material have also been successfully realized by ion beam synthesis.…”
Section: Introductionmentioning
confidence: 99%