Electronic Properties of Semiconductor Interfaces

Mönch, Winfried

doi:10.1007/978-0-387-29185-7_8

Cited by 2 publications

(1 citation statement)

References 49 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Therefore, in device processing, it is crucial to obtain ohmic contacts at the metal/semiconductor interface, being a fundamental building block of any semiconductor device. This metal/semiconductor tandem is frequently called a Schottky barrier device with defined current-voltage (I-V) characteristics [9,10]. Contact resistance, in particular specific contact resistivity (ρ c ), is an important parameter characterizing metal/semiconductor interfaces and metal contacts, a practical quantity describing real contact.…”

Section: Introductionmentioning

confidence: 99%

Facile and Electrically Reliable Electroplated Gold Contacts to p-Type InAsSb Bulk-Like Epilayers

Złotnik

Wróbel

Boguski

et al. 2021

Sensors

View full text Add to dashboard Cite

Narrow band-gap semiconductors, namely ternary InAsSb alloys, find substantial technological importance for mid-infrared application as photodetectors in medical diagnostics or environmental monitoring. Thus, it is crucial to develop electrical contacts for these materials because they are the fundamental blocks of all semiconductor devices. This study demonstrates that electroplated gold contacts can be considered as a simple and reliable metallization technology for the electrical-response examination of a test structure. Unalloyed electroplated Au contacts to InAsSb exhibit specific contact resistivity even lower than vacuum-deposited standard Ti–Au. Moreover, temperature-dependent transport properties, such as Hall carrier concentration and mobility, show similar trends, with a minor shift in the transition temperature. It can be associated with a difference in metallization technology, mainly the presence of a Ti interlayer in vacuum-deposited contacts. Such a transition may give insight into not only the gentle balance changes between conductivity channels but also an impression of changing the dominance of carrier type from p- to n-type. The magnetotransport experiments assisted with mobility spectrum analysis clearly show that such an interpretation is incorrect. InAsSb layers are strongly p-type dominant, with a clear contribution from valence band carriers observed at the whole analyzed temperature range. Furthermore, the presence of thermally activated band electrons is detected at temperatures higher than 220 K.

show abstract

Section: Introductionmentioning

confidence: 99%

Facile and Electrically Reliable Electroplated Gold Contacts to p-Type InAsSb Bulk-Like Epilayers

Złotnik

Wróbel

Boguski

et al. 2021

Sensors

View full text Add to dashboard Cite

show abstract

Device Physics Modeling of Surfaces and Interfaces from an Induced Gap State Perspective

Wager

Kuhn

2016

Critical Reviews in Solid State and Materials Sciences

View full text Add to dashboard Cite

An overview of a device physics formulation of induced gap state (IGS) modeling is presented. IGS modeling attempts to explain the electronic properties of metal (M), semiconductor (S), or insulator (I) surfaces and interfaces in terms of intrinsic behavior associated with evanescent states arising from the termination of a bulk material at a surface or interface. Specifically, semiconductor and insulator surfaces as well as metal-semiconductor (MS), semiconductor-semiconductor (SS), insulator-insulator (II), insulator-semiconductor (IS), metal-metal (MM), metal-insulator-metal (MIM), and metal-insulator-semiconductor (MIS) interfaces are considered. Key aspects of this review involve the development of the electrostatic foundations of IGS modeling and the utilization of equivalent circuits and energy band diagrams to elucidate surface and interface electronic behavior.

show abstract

Electronic Properties of Semiconductor Interfaces

Cited by 2 publications

References 49 publications

Facile and Electrically Reliable Electroplated Gold Contacts to p-Type InAsSb Bulk-Like Epilayers

Facile and Electrically Reliable Electroplated Gold Contacts to p-Type InAsSb Bulk-Like Epilayers

Device Physics Modeling of Surfaces and Interfaces from an Induced Gap State Perspective

Contact Info

Product

Resources

About