Electronic structure and simulation of the dielectric function of β-FeSi2 epitaxial films on Si(111)

Morphological, structural and luminescence properties of Si/β-FeSi2/Si heterostructures fabricated by Fe ion implantation and Si MBE

“…This transition is close to the interband transition at 2.57 eV, which was determined using ultraviolet photoelectron spectroscopy for bulk β-FeSi 2 [11]. The observed distinction in the interband transition energy and the absence of 1.4 eV transition, which were observed for the epitaxial β-FeSi 2 film (figure 3(b)) [12], can be related to mechanical stresses in the β-FeSi 2 layer induced by PIBT [4] and their influence on the absorption spectrum. This proves that iron disilicide crystallites were formed on the surface after PIBT in the form of a granular film for the Si(1 0 0) surface and floating blocks for the Si(1 1 1) surface.…”

Formation and transport properties of Si(111)/.BETA.-FeSi2/Si nanocluster structures

“…Semiconducting β-FeSi 2 having a direct gap (E g = 0.85 ∼ 0.87 eV [1][2][3][4][5][6][7]) has been paid considerable attention as a very attractive material for silicon-based light emitters and detectors as well as for photovoltaic applications. It is known that iron disilicide islands with diameter of 80∼100 nm, buried in the p-layer of a silicon p-n junction, demonstrate electroluminescence in the energy range of 0.82∼0.84 eV [8][9][10].…”