Electronic structure of InAs/GaAs self-assembled quantum dots

Self-assembled (In,Ga)As/GaAs quantum-dot nanostructures: strain distribution and electronic structure

“…(23) 6 does not require matching of the wavefunctions across the boundary between the dot and the matrix materials. This makes the method applicable to arbitrary (position dependent) confining potentials.…”

“…4,6,11 Among these is the pseudopotential plane-wave approach used by Williamson et a/.. 31 To calculate the energy levels and electron (or hole) wave functions we use an eight-band effective mass approach. The strain effect is included via deformation potential theory.…”

“…6 Both of these methods require considerable computational resources. In the atomistic approach, there is an implicit reliance on the validity of the valence force field model with a Keating interatomic potential.…”

Symmetry ofk∙pHamiltonian in pyramidalInAs∕GaAsquantum dots: Application to the

“…A range of theoretical approaches has been used so far to calculate the energy levels in self-assembled quantum dots -effective mass 4,5,6,7 , k · p 8,9,10,11 and the pseudopotential method 12,13 . In quantum dots with cylindrical symmetry, symmetry considerations have been applied to effectively reduce the geometry of the problem from three-dimensional to two-dimensional, both in the effective mass and the k · p method (within the axial approximation) 14 .…”

Electronic structure of strainedInP/Ga0.51InPryor1, Pistol2, Samuelson3 1997Phys. Rev. B21241300View full textAdd to dashboardCite

“…The pyramidal shape and presence of strain in the islands makes for a potentially rich electronic structure. Theoretical studies of strained islands have employed various degrees of approximation to the geometry, strain distribution, and electron dynamics, ranging from single band models of hydrostatically strained islands, to multiband models including realistic shapes and strain distributions [1][2][3][4].…”