2018
DOI: 10.1016/j.physleta.2017.10.024
|View full text |Cite
|
Sign up to set email alerts
|

Electronic structures, magnetic properties and band alignments of 3d transition metal atoms doped monolayer MoS2

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2

Citation Types

2
28
0
1

Year Published

2019
2019
2024
2024

Publication Types

Select...
9

Relationship

0
9

Authors

Journals

citations
Cited by 61 publications
(31 citation statements)
references
References 36 publications
2
28
0
1
Order By: Relevance
“…34 Notably, the Hubbard U correction was not added here since little changes were found for the electronic structure of MoS 2 in previous studies. [35][36][37][38] Material and membrane characterization. MoS 2 nanosheets were characterized through transmission electron microscopy (TEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS).…”
Section: Methodsmentioning
confidence: 99%
“…34 Notably, the Hubbard U correction was not added here since little changes were found for the electronic structure of MoS 2 in previous studies. [35][36][37][38] Material and membrane characterization. MoS 2 nanosheets were characterized through transmission electron microscopy (TEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS).…”
Section: Methodsmentioning
confidence: 99%
“…The calculations were spin-polarised and no symmetry constraints were imposed. The calculations implemented an on-site Hubbard correction (DFT+U) [48,49] to describe the partially filled Ti 3d and Mo 4d states; U=4.5 eV is applied to Ti 3d states and U=4.0 eV is applied to Mo 4d with these choices for U informed by previous studies [50][51][52][53][54].…”
Section: Dft Calculationsmentioning
confidence: 99%
“…All the first‐principles DFT calculations were performed using the generalized gradient approximation [ 32 ] with an on‐site Hubbard U ( U = 4.0 eV for Mo‐4d and U = 7.5 eV for Nd‐4f) [ 33 ] as implemented in the VASP package. [ 34 ] The cutoff energy for plane wave basis sets was 400 eV.…”
Section: Methodsmentioning
confidence: 99%