Electroplasticity memory devices using conducting polymers and solid polymer electrolytes

Abstract

Erasable memory devices are fabricated by the combination of a conducting polymer and solid polymer electrolyte. The former is used as a memory channel and the latter as an electrolyte medium. The channel conductivity can be controlled over 3‐4 orders of magnitude by electrochemical doping through a writing electrode. The response time, depending on the writing voltage, is several seconds. The characteristics of the memory device are discussed.

Internal ion-gated organic electrochemical transistor: A building block for integrated bioelectronics

“…S5). Although it is theoretically possible to develop integrated circuits using solid-state electrolyte-gated devices, speed is restricted by the ion exchange time between the electrolyte and the channel, and difficulties in patterning the electrolyte limits the minimal device geometry (23,39,(41)(42)(43). We fabricated conformable IGT-based NAND and NOR digital logic gates on 2-m-thick parylene-C supports (Fig.…”

Organic electrochemical transistors

“…With similar structures and different probing set-ups, the authors used PPy, poly(3-methylthiophene) 64 and polyaniline 65 as the active layer in electrochemical transistors for redox sensing and "chemiresistors" applications. 66 From 1985 to 2000, several demonstrations of organic electrochemical transistors were reported, still based on microfabricated lateral electrode structures made on rigid substrates, targeting (i) development of a sandwich structures, 67 (ii) incorporation of solid electrolytes, 68,69 (iii) fabrication of pyrrole-N-methylpyrrole transistor channels that incorporate the diaphorase enzyme, 70 (iv) advancement towards high performance in aqueous and non-aqueous electrolytes. 71 The use of electrolytes as gating media allows a great deal of flexibility in their fabrication of OECTs in terms of the placement of the gate electrode with respect to the channel.…”