2016
DOI: 10.3390/mi7110200
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Electrothermal Actuators for SiO2 Photonic MEMS

Abstract: This paper describes the design, fabrication and characterization of electrothermal bimorph actuators consisting of polysilicon on top of thick (>10 sans-serifμnormalm) silicon dioxide beams. This material platform enables the integration of actuators with photonic waveguides, producing mechanically-flexible photonic waveguide structures that are positionable. These structures are explored as part of a novel concept for highly automated, sub-micrometer precision chip-to-chip alignment. In order to prevent resi… Show more

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Cited by 9 publications
(10 citation statements)
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“…As mentioned in Section 2.2 , to protect the poly-Si layer during the subsequent Si etching steps to release the suspended structures, a layer of PECVD SiO is used to cover the entire wafer ( Figure A1 d), and then the areas where the bondpad and suspended structure without the poly-Si pattern are located are opened by plasma etching ( Figure A1 e). Removing the PECVD SiO layer on the bondpad enables the electrical probing and wire-bonding with PCBs (Printed Circuit Boards) [ 9 ]. As the PECVD SiO stack causes additional post-release deflection, for the SiO -only section without poly-Si, there is no need to keep this PECVD SiO .…”
Section: Table A1mentioning
confidence: 99%
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“…As mentioned in Section 2.2 , to protect the poly-Si layer during the subsequent Si etching steps to release the suspended structures, a layer of PECVD SiO is used to cover the entire wafer ( Figure A1 d), and then the areas where the bondpad and suspended structure without the poly-Si pattern are located are opened by plasma etching ( Figure A1 e). Removing the PECVD SiO layer on the bondpad enables the electrical probing and wire-bonding with PCBs (Printed Circuit Boards) [ 9 ]. As the PECVD SiO stack causes additional post-release deflection, for the SiO -only section without poly-Si, there is no need to keep this PECVD SiO .…”
Section: Table A1mentioning
confidence: 99%
“…As the PECVD SiO stack causes additional post-release deflection, for the SiO -only section without poly-Si, there is no need to keep this PECVD SiO . This is also a major difference, between the front-side recipe that was used before [ 8 , 9 , 10 ] and the current one that needs to facilitate the post-release deformation within the PHASTFlex alignment scheme. After this local removal of SiO , another very thin SiO (∼200 m) is deposited ( Figure A1 f).…”
Section: Table A1mentioning
confidence: 99%
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“…T.-J. Peters & Tichem, 2016) or magnetic resonance imaging equipment (and also many participants; Szucs & Ioannidis, 2017). In psychology, many participants are required for randomization to succeed.…”
Section: %mentioning
confidence: 99%