Elimination of mesa-sidewall gate leakage in InAlAs/InGaAs heterostructures by selective sidewall recessing

Bahl, S.R.; Alamo, J.A. del

doi:10.1109/55.145018

Cited by 86 publications

(21 citation statements)

References 11 publications

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“…This problem should be absent in an implantation process for isolation. For InGaAs HEMTs, a method of recessing the channel edge into the mesa sidewall with the selective etching characteristics of Schottky and buffer layers was developed [16]. The AlGaN and GaN materials are chemically stable at room temperature, and no convenient selective wet etch process has been demonstrated.…”

mentioning

confidence: 99%

Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs

Shiu

Huang

Desmaris

et al. 2007

IEEE Electron Device Lett.

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Abstract-A multienergy oxygen ion implantation process was demonstrated to be compatible with the processing of highpower microwave AlGaN/GaN high electron mobility transistors (HEMTs). HEMTs that are isolated by this process exhibited gate-lag-and drain-lag-free operation. A maximum output power density of 5.3 W/mm at V gs = −4 V and V ds = 50 V and a maximum power added efficiency of 51.5% at V gs = −4 V and V ds = 30 V at 3 GHz were demonstrated on HEMTs without field plates on sapphire substrate. This isolation process results in planar HEMTs, circumventing potential problems with enhanced gate leakage due to the gate contacting the 2-D electron gas at the mesa sidewall.Index Terms-GaN, high electron mobility transistors (HEMTs), implantation, power density, pulsed I-V , transient.

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confidence: 99%

Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs

Shiu

Huang

Desmaris

et al. 2007

IEEE Electron Device Lett.

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“…These sidewall leakages can cause an excessive gate-leakage current and severely degrade the breakdown voltage [10]. For InAlAs/InGaAs heterostructure fieldeffect transistors, a method of recessing the channel edge into the mesa sidewall using a succinic-acid-based selective etchant for InGaAs over InAlAs permits us to solve this problem [11]. Unfortunately, GaN and AlGaN materials are chemically stable and are acid-proof at room temperature.…”

Section: Introductionmentioning

confidence: 98%

“…Several antenna prototypes have been proposed for UWB technology: volcano-smoke [8], dipole/monopole [9,10], and slot antennas [7,11,12]. …”

Section: Introductionmentioning

confidence: 99%

First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology

Werquin

Vellas

Guhel³

et al. 2005

Microw. Opt. Technol. Lett.

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“…The gate recess was etched by the citric buffer etchant which was composed of the volume ratio of CA:H 2 O 2 = 1:1 (CA was made by mixing the monohydrate citric acid and H 2 O of 1:1 by weight) [42]. This step also leads a selective sidewall recessing to etch the exposed part of channel layer simultaneously, resulting in a reduction of gate leakage [43], as shown in Fig. 5.…”

Section: Semiconductor Technologies 136mentioning

confidence: 99%