Elimination of the "Birds Beak" in trench MOS-gate power semiconductor devices

Thapar, N.; Baliga, B. Jayant

doi:10.1109/ispsd.1996.509454

Cited by 3 publications

(3 citation statements)

References 4 publications

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“…Birds-beak is a defect that is difficult to control in device processing, and the presence of the birds-beak structure affects the point at which strong inversion occurs within the device. The deep trench oxide structure of this device is prone to the birds-beak effect as the oxide width does not remain constant due to processing variations [11], [12]. The device used for this investigation also has an arsenic implanted n+ source: arsenic implants are much higher doped compared to phosphorous, resulting in a shallower implant, but lower contact resistance, which is beneficial for the on-state performance.…”

Section: Emulating Processing Variationsmentioning

confidence: 99%

“…Theoretically, a 30-40% overall loss advantage with no serious penalties in safe operating area SOA can be achieved [4]- [6], and advanced trench structures have been developed by numerous manufacturers [7]- [10]. Fabrication of the trench is, however, complex and defects such as birds-beak at the top of the trench occur due to processing variations [11], [12]. The SPT [13], fieldstop (FS) [14] or light punch-through (LPT) [15] designs offer a compromise between the punch through (PT) and non-punch through (NPT) IGBT structures, providing an initial fast turn-off typical of NPT but eliminating the long tail [13], [16].…”

Section: Introductionmentioning

confidence: 99%

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Modeling of Large Area Trench IGBTs: The Effect of Birds-Beak

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Udrea

2019

IEEE Trans. Electron Devices

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Three-dimensional modelling is becoming an increasingly prevalent technique to model more complex device structures. However, this alone is insufficient to accurately model large area devices. This study images the birds-beak in a commercial Insulated Gate Bipolar Transistor (IGBT) and highlights how this processing uncertainty, which impacts the channel properties, has a strong effect on the accuracy of TCAD simulations; resulting in the designer struggling to validate models and underappreciating the true behaviour of the device. It has been demonstrated that the birds-beak effect can be accounted for by a simple two-device model which allows for small-scale and large-scale device behaviours to be matched while limiting the computational effort for designers. The practical effects of birdsbeaking on device performance has also been considered, and it has been shown that the variation in threshold voltage across the chip area results in a 32% reduction in short-circuit endurance time for the device. To overcome this, an alternative n+ emitter implantation is proposed, using a combination of arsenic and phosphorus, so that the device threshold is unaffected by the presence of birds-beaking and its variation during processing.

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Section: Emulating Processing Variationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Modeling of Large Area Trench IGBTs: The Effect of Birds-Beak

Findlay

Udrea

2019

IEEE Trans. Electron Devices

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“…Lateral power devices include conventional lateral double-diffusion metal-oxide-semiconductors (LDMOSs), super-junction LDMOSs, and lateral insulated-gate bipolar transistors (LIGBTs), among others. [1][2][3][4][5] LDMOS is a voltage-controlled device with a gate control circuit that is simple and suitable for integration. LIGBT has the high input impedance of an MOS-gate structure and a higher overall current density during forward conduction than power MOS field-effect transistors (MOSFETs).…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Novel Three-Step Drift-Doped Low-Temperature Polycrystalline Silicon Lateral Double-Diffusion Metal–Oxide–Semiconductor Using Excimer Laser Crystallization

Lin

Chen

Chang

et al. 2009

jjap

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Low-temperature polycrystalline silicon (poly-Si) thin-film transistor lateral double-diffusion metal-oxide-semiconductor field-effect transistors (LTPS TFT LDMOSFETs) and lateral insulated-gate bipolar transistors (LIGBTs) were fabricated by combining a thin-film transistor with a power structure, three-step drift doping, and excimer laser annealing. The maximum breakdown voltage of the three-step drift-doped LTPS-LDMOS after excimer laser annealing is 286 V with a 35 mm drift region length (L drift). The specific on-resistance is low (approximately 9 cm 2) and the ON/OFF current ratio is about 1:28 Â 10 6 with L drift ¼ 15 mm. The subthreshold swing (SS) is about 1 V/ decade. Comparing the three-step drift-doped LDMOS with the three-step drift-doped LIGBT under the same processing conditions clearly indicates that the breakdown voltage and current capacity of LIGBT exceeds those of LDMOS.

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The accumulation channel driven bipolar transistor (ACBT)

Thapar

Baliga

1997

IEEE Electron Device Lett.

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Elimination of the "Birds Beak" in trench MOS-gate power semiconductor devices

Cited by 3 publications

References 4 publications

Modeling of Large Area Trench IGBTs: The Effect of Birds-Beak

Modeling of Large Area Trench IGBTs: The Effect of Birds-Beak

Fabrication of Novel Three-Step Drift-Doped Low-Temperature Polycrystalline Silicon Lateral Double-Diffusion Metal–Oxide–Semiconductor Using Excimer Laser Crystallization

The accumulation channel driven bipolar transistor (ACBT)

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