Embedded Memory and ARM Cortex-M0 Core Using 60-nm C-Axis Aligned Crystalline Indium–Gallium–Zinc Oxide FET Integrated With 65-nm Si CMOS

Onuki, Tatsuya; Uesugi, Wataru; Isobe, Atsuo; Ando, Yasuhisa; Okamoto, Satoru; Kimura, Kiyoshi; Yew, Tri‐Rung; Wu, J. Y.; Shuai, Chi Chang; Wu, Shao Hui; Myers, James; Doppler, Klaus; Fujita, Masahiro; Yamazaki, Shunpei

doi:10.1109/jssc.2016.2632303

Cited by 38 publications

(10 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The extremely low off-current of the oxide semiconductors made them candidates to replace silicon semiconductors in memory, and studies on this topic increased. Various research on DOSRAM [32,33], and other devices such as charge trap devices [34], vertical-NAND (V-NAND) [35], monolithic 3D DRAM [36], vertical Fe-NAND [37], and CAA field effect transistors (FETs) [30] have been reported to date, as shown in figure 1(d). However, insufficient on-current, the low device stability of the AOS-TFT, and sputtering-based processes are huge barriers to further expansion in display and memory fields, and still need to be overcome.…”

Section: History Of Oxide Semiconductor Tfts In Display and Memory In...mentioning

confidence: 99%

Atomic layer deposition for nanoscale oxide semiconductor thin film transistors: review and outlook

Kim

Kim²,

Kim³

et al. 2023

Int. J. Extrem. Manuf.

View full text Add to dashboard Cite

Since the report of amorphous In-Ga-Zn-O (a-IGZO) based thin film transistors (TFTs), interest in oxide semiconductors has increased due to their high mobility, low off-current, low process temperature, and wide flexibility of compositions and processes. However, oxide semiconductors deposited by conventional processes like physical vapor deposition (PVD) leads a problematic issue to produce high-resolution displays and highly integrated memory devices due to the limited process flexibility and the poor conformality on the structured surface. Thus, a need to replace conventional deposition processes has emerged. Atomic layer deposition (ALD) is an advanced technique which could provide conformal, thickness-controlled, and high-quality thin film deposition. From these backgrounds, recently, studies on ALD based oxide semiconductors have dramatically increased. Even so, the relations of film properties of ALD-oxide semiconductors with the main variables associated with deposition and issues related to applications are still less understood than conventional one. In this review, we introduce ALD-oxide semiconductors by providing: (Ⅰ) a brief history and importance of ALD-based oxide semiconductors in the industry, (Ⅱ) a discussion of the value of ALD in oxide semiconductors (in-situ composition control in vertical distribution /vertical structure engineering / chemical reaction and film properties / insulator and interface engineering), and (Ⅲ) an explanation of the challenging issues of scaling oxide semiconductors and ALD in industrial applications. This review provides a valuable perspective for researchers who have interest in semiconductor material and electronic devices by suggesting the reasons why ALD is important in the application of oxide semiconductors.

show abstract

Section: History Of Oxide Semiconductor Tfts In Display and Memory In...mentioning

confidence: 99%

Atomic layer deposition for nanoscale oxide semiconductor thin film transistors: review and outlook

Kim

Kim²,

Kim³

et al. 2023

Int. J. Extrem. Manuf.

View full text Add to dashboard Cite

show abstract

“…This attribution is suitable for various kinds of memory applications. The work in [12] proposed an IGZO TFT DRAM with extremely low leakage, allowing retention time up to days.…”

Section: A Tft Almost-nonvolatile Memorymentioning

confidence: 99%

“…Huang et al proposed the pseudo CMOS structure [4], making it possible to use unipolar TFTs to build a robust digital system, which has been used in some RFID tags [5][6]. Matsubayashi et al fabricated a custom designed IGZO TFT that has extremely low off-state current [10] [11], which was then applied in some emerging memories [12][13] [14]. Near-sensor or in-sensor computing system based on TFT devices is another highlighted topic [15][16] [17].…”

Section: Introductionmentioning

confidence: 99%

Almost-Nonvolatile IGZO-TFT-Based Near-Sensor In-Memory Computing

Liu

Tang

Liu

et al. 2021

2021 IEEE International Symposium on Circuits and Systems (ISCAS)

View full text Add to dashboard Cite

In the era of Intelligent IoT, huge amount of sensor data is collected and then transmitted to processor elements in edge devices or cloud servers. The latency and energy consumption in this process have been a bottleneck and are becoming more severe. To mitigate this problem, the idea of combining sensors, memory and processors for collectively handling the data, has been proposed and explored actively in recent efforts. In this work, thin-film transistor (TFT), which has been widely adopted in display devices and flexible sensors, is exploited. It is shown that, while TFT is promising for nearsensor processing architecture, it also shows a great potential for computing and storage for large-area and low-cost edge sensors. More specifically, we propose an almost-nonvolatile near-sensor computing-in-memory (CiM) array based on indium-galliumzinc-oxide (IGZO) TFT, and further, integrate the CiM array with a sensor array to be a sensing and data pre-process system. We show that such a TFT-based solution can accomplish realtime sensing and multiply-and-accumulate (MAC) processing in the analog field, which simplifies the system design with lowered energy and latency in our neural network evaluations.

show abstract

“…Moreover, application of oxide semiconductors to memory has been studied. Figure 21 shows a chip micrograph and a circuit diagram of a fabricated DOSRAM module [17]. This module has a structure where an array of DOSRAM cells each composed of one CAAC-IGZO FET and one capacitor are monolithically stacked on a sense amplifier array composed of silicon FETs.…”

Section: Device Model Of Caac-igzo Fetmentioning

confidence: 99%

(Invited) Crystalline Oxide Semiconductor Applicable to Low-Power Consumption Edge AI

et al. 2021

View full text Add to dashboard Cite

An oxide semiconductor field-effect transistor (OSFET) using c-axis-aligned crystalline indium–gallium–zinc oxide (CAAC-IGZO) exhibits extremely low off-state current (Ioff) and can be fabricated at a low process temperature that is 400°C or lower. The features indicate that the CAAC-IGZO FET is suitable for a monolithic stacking process and application to artificial intelligence (AI). This paper shows electric characteristics of the CAAC-IGZO FET and their factors.

show abstract

Embedded Memory and ARM Cortex-M0 Core Using 60-nm C-Axis Aligned Crystalline Indium–Gallium–Zinc Oxide FET Integrated With 65-nm Si CMOS

Cited by 38 publications

References 6 publications

Atomic layer deposition for nanoscale oxide semiconductor thin film transistors: review and outlook

Atomic layer deposition for nanoscale oxide semiconductor thin film transistors: review and outlook

Almost-Nonvolatile IGZO-TFT-Based Near-Sensor In-Memory Computing

(Invited) Crystalline Oxide Semiconductor Applicable to Low-Power Consumption Edge AI

Contact Info

Product

Resources

About