Embedded Nanofibers Induced by High‐Energy Ion Irradiation of Bulk GaSb

Abstract

Embedded GaSb nanofibers with an intact surface layer are formed by high‐energy ion irradiation of bulk single‐crystal GaSb (see image). Distinct regimes are present within the fiber layer and the effects of varying implant parameters on the fiber regimes are reported. A growth model for nanofibers is presented, as well as a model for the dose‐dependant removal of the surface cover.

Etch-free formation of porous silicon by high-energy ion irradiation

“…The fundamental mechanism for fabrication of porous Si centers around chemical etching [3,4], and while some studies have shown that ion irradiation prior to chemical etching can be used to control certain properties of porous Si [5,6], all porous Si fabrication processes use some combination of anodization or stain etching to produce the porosity in Si. In contrast, dense porous networks have been fabricated in many semiconductor materials, including Ge [7][8][9], GaSb [10][11][12], and InSb [13][14][15], purely by high-energy ion irradiation of the target material. These porous structures consist of interconnected networks of voids ranging in size from tens to hundreds of nanometers in diameter, and void growth and coalescence results in confinement of the matrix material into fibers or cell walls tens of nanometers in thickness.…”

Surface nanostructuring ofTiO2thin films by high energy ion irradiation

“…By considering the previous evidences reported for GaSb, 27 He implanted Si ͑Ref. 21͒ and the results presented in this paper for TiO 2 , we propose the mechanism schematized in Fig.…”

“…Interestingly, for both materials similar structures consisting of voids, cellular structures or nanorod surface patterns have been observed. For GaSb irradiated with 30 keV Ga + ions, Perez-Bergquist et al 27 found that for low doses ͑1.3ϫ 10 15 ions/ cm 2 ͒ the first layers of the material breached, exposing a thin porous regions to the surface. By contrast, at higher doses ͑6.5ϫ 10 15 ions/ cm 2 ͒, the pores grew outwards developing a typical nanorod surface pattern.…”

“…Similar results were also obtained for materials such as Ge, GaSb, or InSb, where the long-range migration of atoms through the bulk and the short-range movement of point defects during irradiation were responsible for the so-called anomalous swelling and the formation of pores. [25][26][27] In our previous work, we tentatively proposed that this latter mechanism could be responsible for the formation of pores in the TiO 2 thin films since they also develop when the material is irradiated with boron or sulfur, two elements that in no way could form gaseous molecules within the material. In the present work, we present a more thorough and detailed study of the changes occurring in TiO 2 thin films after irradiation under several conditions.…”

Void Formation and Structure Change Induced by Heavy Ion Irradiation in GaSb and InSb

“…In the case of GaN, [5][6][7][8] nitrogen bubbles and gallium nanocrystals are formed in the amorphized layer by ion irradiation. In the case of GaSb [9][10][11][12][13][14][15][16][17] and InSb, 9,17,18) unusual behaviors, such as elevation, swelling, and the formation of holes, voids, nanofibers, and cellular structures with nano to submicron dimensions, are observed on irradiated surfaces. Similar phenomena occur in irradiated Ge surfaces (for example, see Refs.…”