A detailed low-energy electronic structure of a Kondo insulator YbB12 was revealed by a synergetic combination of ultrahigh-resolution laser photoemission spectroscopy (PES) and time-resolved PES. The former confirmed a 25-meV pseudogap corresponding to the Kondo temperature of this material, and more importantly, it revealed that a 15-meV gap and a Kondo-peak feature developed below a crossover temperature T * ∼ 110 K. In harmony with this, the latter discovered a very long recombination time exceeding 100 ps below ∼T * . This is a clear manifestation of photoexcited carriers due to the bottleneck in the recovery dynamics, which is interpreted as a developing hybridization gap of a hard gap. [4,5]. According to infrared spectroscopy studies [6], the Drude response is sharply decreased below ∼80 K and an indirect gap of ∼15 meV opens at 8 K. Inelastic neutron scattering studies reported the spin gap of 15 meV in the insulating state [7,8]. This crossover is frequently explained by a narrow-gap formation due to hybridization between the conduction band electrons and the localized f electrons (c-f hybridization) within the scheme of the periodic Anderson model. However, there is increasing evidence that some metallic states persist within the gap of many Kondo insulators, making elusive whether the low-temperature (T ) gap is a real charge gap or a pseudogap. For example, the resistivity is still as low as ∼1 Ω cm at low T in high-quality single crystals of some Kondo insulators, such as YbB 12 [3] and SmB 6 [9]. Photoemission spectroscopy (PES) studies [10][11][12][13][14] reported a pseudogap feature (<20 meV) that can be interpreted as a hybridization gap, but the finite spectral weight still remained around the Fermi level E F . In addition, tunneling spectra in YbB 12 exhibit that a finite state persists at the zero-bias voltage [15,16].In this Rapid Communication, to settle the above controversy, we investigate the electronic states within the * Present address: Department of Physics, University of Tokyo, Kashiwa, Chiba 277-8561, Japan pseudogap as well as its evolution on cooling by an unprecedented energy resolution set to 1 meV using ultrahigh-resolution laser PES [17]. Furthermore, we employed time-resolved PES (TrPES) with a pump-probe method and investigate the nonequilibrium electron dynamics of YbB 12 at various temperatures. The recovery time from photoexcited nonequilibrium states is the measure of a charge gap: If there is a gap as in insulators, semiconductors, or nodeless superconductors, the electronic recovery time will become exceedingly long in comparison with a typical metal [18]. Such behavior was reported in past TrPES studies on typical semiconducting materials, such as GaAs and Si [19]. Since TrPES provides direct information of the electron-hole recombination, it is particularly appropriate to investigate such dynamics.Single crystals of YbB 12 were grown by the floating zone method [3]. In both ultra-high-resolution laser PES and TrPES measurements, the samples were fractured in situ...