Emerging Hardware Enablers for More Efficient Use of the Spectrum

Laughlin, Leo; Boccardi, Federico; Gamlath, Chris; Arabi, Eyad; Balram, Krishna C.; Morris, Kevin; Beach, Mark A

doi:10.1109/dyspan.2019.8935779

Cited by 10 publications

(6 citation statements)

References 43 publications

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“…This frequency range provides a well-balanced availability of large bandwidths and low free path loss, and it is considered compatible with the current RF front-end architecture [3]. Therefore, the key to implementing the envisioned 5G NR at sub-6 GHz lies in the development of the essential RF signal processing components, e.g., acoustic filters, to accommodate the requirements of 5G NR [4], [5].…”

Section: Introductionmentioning

confidence: 99%

Enabling Higher Order Lamb Wave Acoustic Devices With Complementarily Oriented Piezoelectric Thin Films

Yang

Link

et al. 2020

J. Microelectromech. Syst.

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In this work, we present a new paradigm for enabling gigahertz higher-order Lamb wave acoustic devices using complementarily oriented piezoelectric (COP) thin films. Acoustic characteristics are first theoretically explored with COP lithium niobate (LiNbO 3) thin films, showing their excellent frequency scalability, low loss, and high electromechanical coupling (k 2). Acoustic resonators and delay lines are then designed and implemented, targeting efficient excitation of higher-order Lamb waves with record-breaking low loss. The fabricated resonator shows a 2 nd-order symmetric (S2) resonance at 3.05 GHz with a high quality factor (Q) of 657, and a large k 2 of 21.5% and a 6 th-order symmetric (S6) resonance at 9.05 GHz with a high Q of 636 and a k 2 of 3.71%, both among the highest demonstrated for higher-order Lamb wave devices. The delay lines show an average insertion loss (IL) of 7.5 dB and the lowest reported propagation loss of 0.014 dB/µm at 4.4 GHz for S2. Notable acoustic passbands up to 15.1 GHz are identified. Upon further optimizations, the proposed COP platform can lead to gigahertz low-loss wideband acoustic components.

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Section: Introductionmentioning

confidence: 99%

Enabling Higher Order Lamb Wave Acoustic Devices With Complementarily Oriented Piezoelectric Thin Films

Yang

Link

et al. 2020

J. Microelectromech. Syst.

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“…6 shows the simulated k 2 t and TCF versus LiNbO 3 thickness for the A 3 mode. All TCF values throughout this article refer to the series resonance frequency shift and can be calculated using (6). The figure reveals the tradeoff t and TCF of the proposed resonator versus LiNbO 3 thickness for the A 3 mode.…”

Section: B a 3 Mode Acoustic Resonator Structurementioning

confidence: 99%

“…services [3], [4]. eMBB, which is the main focus of the 5G NR, imposes a constant demand for higher data rates in an increasingly crowded spectrum [3], [5], [6]. Radio frequency (RF) front ends are now required to coexist with tighter spectral spacing while operating at higher frequencies and over larger bandwidths.…”

mentioning

confidence: 99%

Near-Zero Drift and High Electromechanical Coupling Acoustic Resonators at > 3.5 GHz

Hassanien

Gong

2021

IEEE Trans. Microwave Theory Techn.

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In this article, near-zero drift and high electromechanical coupling acoustic resonators have been designed and demonstrated. The acoustic resonator is based on Lamb acoustic waves in a bimorph composed of lithium niobate on silicon dioxide. Our approach breaks through a performance boundary in conventional Lamb-wave resonators by introducing the bimorph while operating at higher order resonant modes. This enables the resonator to achieve frequency scalability, a low-temperature coefficient of frequency, and high electromechanical coupling altogether. The electromechanical coupling and temperature coefficient of the resonator were analytically optimized for the A 3 mode through adjusting the thicknesses of different materials in the bimorph. Resonators with different dimensions and stack thickness were fabricated and measured, resulting in a temperature coefficient of frequency ranging from −17.6 to −1.1 ppm/ • C, high electromechanical coupling ranging from 13.4% to 18%, and quality factors up to 800 at 3.5 GHz. The achieved specifications are adequate for fifth-generation (5G) sub-6-GHz frequency bands n77 and n78. Index Terms-Acoustic resonators, fifth generation (5G), lithium niobate on insulator (LNOI), low-temperature coefficient of frequency (TCF), microelectromechanical systems (MEMS), new radio (NR), piezoelectricity. I. INTRODUCTION T HE fifth-generation mobile network (5G) is a global wireless standard advancing the prevalent connectivity between people, machines, and devices [1], [2]. The third-generation partnership project (3GPP), a collective project partnership of mobile system manufacturers, has played a critical role in the development and deployment of the 5G standard [1]. Specifically, 5G new radio (NR) uses modulation schemes, waveforms, and access technologies, enabling increased data rates, coverage, reliability, capacity, and low latency [2]. 5G is driven by consumers and industrial trends, such as enhanced mobile broadband (eMBB), Internet of Things (IoT), smart vehicles, and healthcare/critical Manuscript

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“…Currently, wireless IoT systems primarily use radio-frequency (RF) technology, such as Bluetooth, ZigBee, LoRaWAN, and NB-IoT [1]. However, in high-density device scenarios, the limited availability of spectrum can cause performance issues [6]. Further, these technologies often use industrial, scientific, and medical (ISM) bands [7] and may require commercial licensing, which increase the cost of large networks of wireless devices.…”

mentioning

confidence: 99%

Carrier synchronisation in multiband carrierless amplitude and phase modulation for visible light communication‐based IoT systems

Rodrigues

Figueiredo

Alves

et al. 2023

IET Optoelectronics

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The technical feasibility of developing an Internet of Things multi‐user communication system is evaluated based on a central digital multiband carrierless amplitude and phase transmitter, which broadcasts data on multiple channels for a number of low‐cost/low‐power devices. It addresses the issue of carrier synchronisation, which is critical in real‐world implementations because of imperfections of devices and the delays of the system. A simulation model for the traditional Costas Loop is presented, along with performance results, which demonstrate the system's ability to synchronise with pull‐in and lock ranges of ±800 and ±900 Hz, respectively. The loop requires 1.194 ms to be in the locked state, allowing the system to lock within 6 symbols period. In addition, the authors measured the performance of the system in the presence of noise and interference from other modulated bands. The results showed that noise and interference did not degrade the system's performance. Although the system was unable to lock when energy was present in adjacent bands, alternative options such as a high order phase‐locked loop and hybrid frequency‐division multiple access and time‐division multiple access, can improve system performance without significantly increasing the cost and complexity of the devices.

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Emerging Hardware Enablers for More Efficient Use of the Spectrum

Cited by 10 publications

References 43 publications

Enabling Higher Order Lamb Wave Acoustic Devices With Complementarily Oriented Piezoelectric Thin Films

Enabling Higher Order Lamb Wave Acoustic Devices With Complementarily Oriented Piezoelectric Thin Films

Near-Zero Drift and High Electromechanical Coupling Acoustic Resonators at > 3.5 GHz

Carrier synchronisation in multiband carrierless amplitude and phase modulation for visible light communication‐based IoT systems

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