Emerging of two-dimensional materials in novel memristor

Zhou, Zhican; Yang, Fengyou; Wang, Shu; Wang, Lei; Wang, Xiaofeng; Wang, Cong; Xie, Yong; Liu, Qian

doi:10.1007/s11467-021-1114-5

Cited by 51 publications

(19 citation statements)

References 108 publications

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“…The discovery of two‐dimensional (2D) materials has brought new opportunities to materials science. [ 11,12 ] These materials have been used in field‐effect transistors, [ 13 ] memristors, [ 14,15 ] tunneling junctions, [ 16 ] and photodetectors. [ 17 ] Moreover, 2D ferroelectric materials attract a lot of attention with atomic level flatness, few dangling bonds, and strong ferroelectricity even at a few nanometers thickness, such as CuInP 2 S 6 [ 18,19 ] and α‐In 2 Se 3 .…”

Section: Introductionmentioning

confidence: 99%

Multifunctional Dual Gated Coupling Device Using Van Der Waals Ferroelectric Heterostructure

Jin

Wang

Peng

et al. 2022

Adv Elect Materials

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ultrasonic equipment and capacitors, [2] the Pb(Zr,Ti)O 3 systems are considered excellent piezoelectric material, [3,4] and the study of ferroelectricity in thin-film structures has been facilitated by the discovery of poly(vinylidene fluoridetrifluoroethylene). [5] In modern studies, ferroelectric materials are mainly applied in the development of ferroelectric non volatile memory (FeRAM), [6] negative capacitance field-effect transistors (NCFET), [7,8] and ferroelectric photodetectors [9] and biosensors. [10] Among these, FeRAM generally garners the most attention because of its fast programming and erasing speed (≈ns), low power consumption, and manufacturing compatibility. However, not all applications of ferroelectric materials have produced favorable results, silicon-based ferroelectric field-effect transistors have been lim-The ORCID identification number(s) for the author(s) of this article can be found under

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Section: Introductionmentioning

confidence: 99%

Multifunctional Dual Gated Coupling Device Using Van Der Waals Ferroelectric Heterostructure

Jin

Wang

Peng

et al. 2022

Adv Elect Materials

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“…NVMs families including ferroelectric random-access memory, magnetic random-access memory, phase-change random access memory (PCRAM), and resistive random-access memory, were initially devised to replace static random-access memory and dynamic random-access memory for future memory devices (Zhang et al, 2020). Triggered by recent progress of semiconductor technologies, several encouraging features such as ultra-high integration density (Chen et al, 2019), ultra-small energy consumption (Gunzel et al, 2021), ultra-fast write/read speed (Zhou et al, 2022), and long data retention (Dongale et al, 2021), have been found on NVMs. These superior traits astonishingly match the biological properties of the brain neurons and synapses.…”

Section: Introductionmentioning

confidence: 99%

Impact of Thermal Boundary Resistance on Thermoelectric Effects of the Blade-Type Phase-Change Random Access Memory Device

Lian

Gao

et al. 2022

Front. Mater.

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Phase-change random access memory (PCRAM) is widely regarded as one of the most promising candidates to replace Flash memory as the next generation of non-volatile memories due to its high-speed and low-power consumption characteristics. Recent advent of the blade-type PCRAM with low programming current merit further confirms its prospects. The thermoelectric effects existing inside the PCRAM devices have always been an important factor that determines the phase-transformation kinetics due to a fact that it allows PCRAM to have electric polarity dependent characteristics. However, the potential physics governing the thermoelectric effects for blade-type PCRAM device still remains vague. We establish a three-dimensional (3D) electro-thermal and phase-transformation model to study the influences of thermal boundary resistance (TBR) and device scaling on the thermoelectric effects of the blade-type PCRAM during its “RESET” operation. Our research shows that the presence of TBR significantly improves the electric polarity-dependent characteristics of the blade-type PCRAM, and such polarity-dependent characteristic is found immune to the scaling of the device. It is therefore possible to optimize the thermoelectric effects of the blade-type PCRAM through appropriately tailoring the TBR parameters, thus further lowering resulting power consumption.

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“…Two-dimensional (2D) materials, such as transition metal dichalcogenides (TMDCs), have attracted numerous attention and accelerated the progress of memristive devices in both the storage and computing applications in recent years ( Chia and Pumera, 2018 ; Akinwande et al, 2019 ; Li et al, 2019 ; Liu et al, 2019 , 2020 ; Yang et al, 2019 ; Chen et al, 2020 ; Wang et al, 2020 ; Zavabeti et al, 2020 ; Zhou et al, 2021 ; Kwon et al, 2022 ). Wang et al (2018) have reported a robust layered MoS 2–x O x– based memristor through the oxidation of MoS 2 films in ambient air.…”

Section: Introductionmentioning

confidence: 99%

Real-time numerical system convertor via two-dimensional WS2-based memristive device

Xing

Sun

Chen

et al. 2022

Front. Comput. Neurosci.

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The intriguing properties of two-dimensional (2D) transition metal dichalcogenides (TMDCs) enable the exploration of new electronic device architectures, particularly the emerging memristive devices for in-memory computing applications. Implementation of arithmetic logic operations taking advantage of the non-linear characteristics of memristor can significantly improve the energy efficiency and simplify the complexity of peripheral circuits. Herein, we demonstrate an arithmetic logic unit function using a lateral volatile memristor based on layered 2D tungsten disulfide (WS2) materials and some combinational logic circuits. Removable oxygen ions were introduced into WS2 materials through oxygen plasma treatment process. The resistive switching of the memristive device caused by the thermophoresis-assisted oxygen ions migration has also been revealed. Based on the characteristics of excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), and spike rate dependent plasticity (SRDP), a real-time numerical system convertor was successfully accomplished, which is a significant computing function of arithmetic logic unit. This work paves a new way for developing 2D memristive devices for future arithmetic logic applications.

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Emerging of two-dimensional materials in novel memristor

Cited by 51 publications

References 108 publications

Multifunctional Dual Gated Coupling Device Using Van Der Waals Ferroelectric Heterostructure

Multifunctional Dual Gated Coupling Device Using Van Der Waals Ferroelectric Heterostructure

Impact of Thermal Boundary Resistance on Thermoelectric Effects of the Blade-Type Phase-Change Random Access Memory Device

Real-time numerical system convertor via two-dimensional WS2-based memristive device

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