Emission and absorption cross-sections of an Er:GaN waveguide prepared with metal organic chemical vapor deposition

Wang, Q.; Dahal, R.; Feng, I. W.; Lin, J. Y.; Jiang, Hongxing; Hui, Rongqing

doi:10.1063/1.3636418

Cited by 12 publications

(13 citation statements)

References 12 publications

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“…Based on the present and previous studies [15,16], we have obtained the optical excitation cross section σ exc of Er ions in GaN host as a function of the excitation wavelength λ exc , and the results are summarized in Fig. 5.…”

Section: Resultsmentioning

confidence: 98%

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Optical excitation cross section of erbium in GaN

Feng

Lin

et al. 2013

Appl. Opt.

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Epilayers of erbium-doped GaN (GaN:Er) were synthesized by metal-organic chemical vapor deposition, and the optical excitation cross section (σ(exc)) of Er ions in this host material were determined. Photoluminescence (PL) measurements were made using laser diodes at excitation wavelengths of 375 and 405 nm, and the integrated emission intensity at 1.54 μm was measured as a function of excitation photon flux. Together with time-resolved PL measurements, values of σ(exc) of Er ions in GaN:Er were obtained. For excitation at 375 nm, the observed excitation cross section was found to be 4.6×10(-17) cm(-2), which is approximately three orders of magnitude larger than that using resonant excitation. Based on the present and previous works, the optical excitation cross section σ(exc) of Er ions in GaN:Er as a function the excitation wavelength has been obtained. The large values of σ(exc) with near-band-edge excitation makes GaN:Er attractive for realization of chip-scale photonic devices for optical communications.

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Section: Resultsmentioning

confidence: 98%

“…5. Under a resonant excitation (λ exc 980 or 1480 nm), the 1.54 μm emission is limited by the small absorption cross section of Er 3 atoms [16]. On the other hand, with the above or near-bandgap excitation, Er 3 atoms are excited through carriers generated by optical absorption in the GaN host.…”

Section: Resultsmentioning

confidence: 99%

Optical excitation cross section of erbium in GaN

Feng

Lin

et al. 2013

Appl. Opt.

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“…This in turn leads to higher optical loss in the GaN:Er waveguides. Our previous results indicate that the absorption cross section of Er 3 in GaN is about σ a ∼ 10 −20 cm 2 at λ 1.54 μm [22]. This implies that the optical absorption attenuation due to the presence of Er with N Er ∼ 2 × 10 20 cm −3 is about ∼3 dB∕cm.…”

Section: Discussionmentioning

confidence: 86%

Correlation between the optical loss and crystalline quality in erbium-doped GaN optical waveguides

Feng

Zhao

et al. 2013

Appl. Opt.

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Erbium-doped GaN (GaN:Er) epilayers were synthesized by metal organic chemical vapor deposition. GaN:Er waveguides were fabricated based on four different GaN:Er layer structures: GaN:Er/GaN/Al2O3, GaN:Er/GaN/AlN/Al2O3, GaN:Er/GaN/Al(0.75)Ga(0.25)N/AlN/Al2O3, and GaN/GaN:Er/GaN/Al2O3. Optical loss at 1.54 μm in these waveguide structures has been measured. It was found that the optical attenuation coefficient of the GaN:Er waveguide increases almost linearly with the GaN (002) x-ray rocking curve linewidth. The lowest measured loss was ~6 dB/cm.

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“…Most of the previously studied GaN waveguide structures were based on undoped or unintentionally doped GaN thin epilayers of a few microns in thickness for passive integrated photonic device applications. [20][21][22] Waveguide structures incorporating $0.5 lm thick Er:GaN were fabricated on sapphire substrates for studying the basic optical properties, including the carrier lifetime, 23 excitation and absorption cross sections, 24,25 and optical loss. 26 Waveguide based Er doped GaN and InGaN thin epilayers were fabricated to demonstrate the optical amplification effect under band-edge excitation targeting for applications in chip-scale optical communications.…”

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confidence: 99%

Growth and fabrication of GaN/Er:GaN/GaN core-cladding planar waveguides

Sun

Yan

Smith

et al. 2019

Applied Physics Letters

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Erbium doped gallium nitride (Er:GaN) bulk crystals have emerged as a promising optical gain material for high energy lasers (HELs) operating at the 1.5 lm "retina-safe" spectral region. Among the many designs of HEL gain medium, the core-cladding planar waveguide (PWG) structure is highly desired due to its abilities to provide excellent optical confinement and heat dissipation. We report the realization of a GaN/Er:GaN/GaN core-cladding PWG structure synthesized by hydride vapor phase epitaxy and processed by mechanical and chemical-mechanical polishing. An Er doping concentration of [Er] ¼ 3 Â 10 19 atoms/cm 3 has been attained in the core layer, as confirmed by secondary ion mass spectrometry measurements. A strong 1.54 lm emission line was detected from the structure under 980 nm resonant excitation. It was shown that these PWGs can achieve a 96% optical confinement in the Er:GaN core layer having a thickness of 50 lm and [Er] ¼ 3 Â 10 19 atoms/cm 3 . This work represents an important step toward the realization of practical Er:GaN gain medium for retina-safe HEL applications.

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Emission and absorption cross-sections of an Er:GaN waveguide prepared with metal organic chemical vapor deposition

Cited by 12 publications

References 12 publications

Optical excitation cross section of erbium in GaN

Optical excitation cross section of erbium in GaN

Correlation between the optical loss and crystalline quality in erbium-doped GaN optical waveguides

Growth and fabrication of GaN/Er:GaN/GaN core-cladding planar waveguides

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