Employing threshold‐based behavior and network dynamics for the creation of memristive logic circuits and architectures

Abstract

This work focuses on the creation of logic circuits by employing the collective dynamics of assembles of reciprocal memristors. A novel circuit design methodology is described where the computing systems comprise passive memristors interfaced with active CMOS circuitry, working under already known circuit design principles from the CMOS technology. The accuracy and completeness of this straightforward methodology is demonstrated through SPICE simulations which are based on a threshold‐type device model for memristors. Overall, this work contributes to the creation of proper methodologies which will enable the development of efficient design flows for circuits and architectures comprising memristors. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Biomaterial-Based Nonvolatile Resistive Memory Devices toward Ecofriendliness and Biocompatibility

“…STT-MRAM has a drawback of reliability, while PCM has a disadvantage of an extensive write latency. Therefore, an alternative of a nonvolatile memory device for the next generation has been proposed by researchers in the form of resistive random-access memory (RRAM) devices with the advantages of low power consumption, high scalability, simple structure, easy fabrication, small size, and low cost. ,,− ,,,,− Applications of RRAMs include but are not limited to aerospace, chaotic circuits, − neuromorphic computing, ,− memory devices, ,,− ,,− ,− and logical circuit displays. − RRAMs are usually fabricated as a vertical device with a functional layer of an insulator/semiconductor sandwiched between two metallic electrodes; however, it can also have a planar structure. − RRAMs can be further classified into nonvolatile and volatile memory devices on the basis of applied electric field, because nonvolatile memories can retain data even without the application of an external power supply, while volatile memories cannot retain their stored data in the absence of applied voltage. − RRAMs usually operate reversibly with...…”

Design and development of nanoelectronic circuits and architectures

“…This section presents a SPICE-level simulation-based validation of the CMOS-like circuit design methodology using the Cadence PSPICE simulation environment. Simulations are based on the threshold-type memristor model which was presented in Chapter 2 [56], [100].…”