Enabling technologies for system-level simulation of MEMS

Bechtold, Tamara; Schrag, G.; Feng, Lihong

doi:10.1109/estc.2014.6962795

Cited by 8 publications

(10 citation statements)

References 25 publications

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“…The thermal diffusivity of heavily doped LPCVD polysilicon films was reported to be 17 mm 2 /s by Mastrangelo and Muller [ 22 ], while single crystal silicon was reported as 82–95 mm 2 /s [ 5 ]. According to many other reports [ 23 , 24 , 25 , 26 , 27 ], heavily doped polysilicon has a thermal diffusivity ranging from 21.43 mm 2 /s to 36.56 mm 2 /s. Thermal characteristics can vary significantly from small differences in processes and geometrical settings.…”

Section: Experiments and Resultsmentioning

confidence: 99%

In-Situ Testing of the Thermal Diffusivity of Polysilicon Thin Films

Zhou

Sun

et al. 2016

Micromachines

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This paper presents an intuitive yet effective in-situ thermal diffusivity testing structure and testing method. The structure consists of two doubly clamped beams with the same width and thickness but different lengths. When the electric current is applied through two terminals of one beam, the beam serves as thermal resistor and the resistance R(t) varies as temperature rises. A delicate thermodynamic model considering thermal convection, thermal radiation, and film-to-substrate heat conduction was established for the testing structure. The presented in-situ thermal diffusivity testing structure can be fabricated by various commonly used micro electro mechanical systems (MEMS) fabrication methods, i.e., it requires no extra customized processes yet provides electrical input and output interfaces for in-situ testing. Meanwhile, the testing environment and equipment had no stringent restriction, measurements were carried out at normal temperatures and pressures, and the results are relatively accurate.

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Section: Experiments and Resultsmentioning

confidence: 99%

In-Situ Testing of the Thermal Diffusivity of Polysilicon Thin Films

Zhou

Sun

et al. 2016

Micromachines

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“…The stability problem introduced by pull-in effect is a rather complicated problem, and it should be discussed with regard to different states [ 39 , 40 , 41 ].…”

Section: System Description and Topology Analysismentioning

confidence: 99%

“…Our system is the modulated voltage case, in which the pull-in trigger point should be calculated from the accumulation effect of a series bits [ 43 ]. The dynamic pull-in is hard to be modeled, due to its strong nonlinear characteristics and because of the multiple solutions of the system state [ 39 , 44 , 45 ]. The modeling of the sensing element and stability analysis technique for multistate nonlinear systems need to be further researched, which is outside the scope of this paper.…”

Section: System Description and Topology Analysismentioning

confidence: 99%

A ΣΔ Closed-Loop Interface for a MEMS Accelerometer with Digital Built-In Self-Test Function

et al. 2018

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Sigma-delta (ΣΔ) closed-loop operation is the best candidate for realizing the interface circuit of MEMS accelerometers. However, stability and reliability problems are still the main obstacles hindering its further development for high-end applications. In situ self-testing and calibration is an alternative way to solve these problems in the current process condition, and thus, has received a lot of attention in recent years. However, circuit methods for self-testing of ΣΔ closed-loop accelerometers are rarely reported. In this paper, we propose a fifth-order ΣΔ closed-loop interface for a capacitive MEMS accelerometer. The nonlinearity problem of the system is detailed discussed, the source of it is analyzed, and the solutions are given. Furthermore, a built-in self-test (BIST) unit is integrated on-chip for in situ self-testing of the loop distortion. In BIST mode, a digital electrostatic excitation is generated by an on-chip digital resonator, which is also ΣΔ modulated. By single-bit ΣΔ-modulation, the noise and linearity of excitation is effectively improved, and a higher detection level for distortion is easily achieved, as opposed to the physical excitation generated by the motion of laboratory equipment.

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“…insertion, isolation and reflection loss (Rebeiz, 2003; Jaafar et al , 2014). These devices, used in many MEMS, involve complex phenomena that make the models obtained from field analysis be too large to be included in system level simulations (Bechtold et al , 2013). That is why model order reduction strategies are needed, so that a discrete model with a reduced complexity is obtained (Schilders et al , 2008).…”

Section: Introductionmentioning

confidence: 99%

Physics-aware macromodels for MEMS switches

Lup

Ciuprina

Dumitrache

et al. 2020

COMPEL

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Purpose The purpose of this paper is to propose a physics-aware algorithm to obtain radio frequency (RF)-reduced models of micro-electromechanical systems (MEMS) switches and show how, together with multiphysics macromodels, they can be realized as circuits that include both lumped and distributed parameters. Design/methodology/approach The macromodels are extracted with a robust procedure from the solution of Maxwell’s equations with electromagnetic circuit element (ECE) boundary conditions. The reduced model is extracted from the simulations of three electromagnetic field problems, in full-wave regime, that correspond to three configurations: signal lines alone, switch in the up and down positions. Findings The technique is exemplified for shunt switches, but it can be extended for lateral switches. Moreover, the algorithm is able take frequency dependence into account both for the signal lines and for the switch model. For the later, the order of the model is increased until a specified accuracy is achieved. Originality/value The use of ECE as boundary conditions for the RF simulation of MEMS switches has the advantage that the definition of ports is unambiguous and robust as the ports are clearly defined. The extraction approach has the advantage that the simplified model keeps the basic phenomena, i.e. the propagation of the signal along the lines. As the macromodel is realized with a netlist that uses transmission lines models, the lines’ extension is natural. The frequency dependence can be included in the model, if needed.

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Enabling technologies for system-level simulation of MEMS

Cited by 8 publications

References 25 publications

In-Situ Testing of the Thermal Diffusivity of Polysilicon Thin Films

In-Situ Testing of the Thermal Diffusivity of Polysilicon Thin Films

A ΣΔ Closed-Loop Interface for a MEMS Accelerometer with Digital Built-In Self-Test Function

Physics-aware macromodels for MEMS switches

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