Endurance and Data Retention Improvement of Silicon–Oxide–Nitride–Oxide–Silicon Nonvolatile Semiconductor Memory Devices with Partially Bottom-Silicon-Rich Nitride Structure

Abstract

A significant reliability improvement in silicon–oxide–nitride–oxide–silicon (SONOS) flash memory devices by band-gap engineering of the nitride layer has been attained. The gradually varied reaction gas flow rate during deposition has generated special nitride films with non uniform composition profiles and band gaps. As a result, SONOS devices with partially Si-rich nitride structures have exhibited superior cycling endurance, radiation hardness, and data retention compared with devices with a uniform standard nitride. The marked improvement can be attributed to the increased charge-trapping/detrapping efficiency of the nitride layer since a significant number of highly accessible trapping levels have been created in the nitride that has a graded band gap. In addition, the deepened barrier heights between the nitride and its surrounding oxides may also reduce undesirable charge-loss probability and assist in charge storage. Because the dimension of flash memory cells is continuously shrinking, the proposed technique will be valuable for mass storage applications.

Mobile-Ion-Induced Charge Loss Failure in Silicon–Oxide–Nitride–Oxide–Silicon Two-Bit Storage Flash Memory

“…With continued-scaling down, the number will decrease even further, which means that reliability will become even more important. To maintain the reliability of this technology, it is important to have not only a technical understanding of device structures, operational principles, [5][6][7][8] and materials 9,10) but also an understanding from a manufacturing technology viewpoint. In SONOS 2-bit storage flash memory, we discovered a case of noncycled charge loss (charge loss) that is dependent on the distance between contact windows and word lines (WLs) and is further dependent on the conditions of thermal treatment after the formation of contact windows.…”

Retention Reliability Improvement of Silicon–Oxide–Nitride–Oxide–Silicon Nonvolatile Memory with N2O Oxidation Tunnel Oxide

“…However, SONOS memory also has some reliability problems such as poor endurance, short retention, and a strong trade-off between programming/erase speed and data retention in the conventional SONOS memory structure. [3][4][5] Various oxide-nitride-oxide (ONO) processing technologies have been investigated to further improve the reliability.…”