Endurance of thin-oxide nonvolatile MNOS memory transistors

White, M.H.; Dzimianski, J. W.; Peckerar, Martin C.

doi:10.1109/t-ed.1977.18781

Cited by 25 publications

(3 citation statements)

References 8 publications

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“…It has been reported (28,29) that there may be an appreciable increase in the interface state density of MNOS devices due to repeated write/erase cycling. This interface state density may be due to both the trapping states at the oxide-silicon interface and, near the oxide-nitride interface, of the MNOS devices (28).…”

Section: Analysis and Discussionmentioning

confidence: 99%

The Combined Effect of Hydrogen and Oxygen Impurities in the Silicon Nitride Film of MNOS Devices

Kapoor

Bailey

et al. 1992

J. Electrochem. Soc.

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The combined effect of varying the hydrogen and oxygen impurities in the silicon nitride film of metal‐nitride‐oxide‐semiconductor (MNOS) devices was studied to develop a correlation among the chemical composition, current conduction, charge trapping, and memory properties of the devices. The atomic percentage of hydrogen increased in the film as a function of decreasing deposition temperature from 850 to 650°C. Oxygen was incorporated into the film by replacing nitrogen atoms through the use of nitrous oxide gas during the film deposition process. The addition of oxygen further reduced the hydrogen concentration in the film. The trapped electron and hole densities decreased by 25 and 66%, respectively, with a corresponding decrease in film conductivity as hydrogen and oxygen concentration in the silicon nitride film increased by 4 and 12%, respectiyely. The incorporation of hydrogen and oxygen improved the overall average device retention and endurance characteristics by 40% and from 107 to 108 cycles, respectively. The hydrogen and oxygen impurities may passivate the silicon dangling bonds associated with shallow traps within the bandgap of silicon nitride and, thus, allow the carriers to become trapped in deep traps, yielding enhanced memory properties in the MNOS devices.

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Section: Analysis and Discussionmentioning

confidence: 99%

The Combined Effect of Hydrogen and Oxygen Impurities in the Silicon Nitride Film of MNOS Devices

Kapoor

Bailey

et al. 1992

J. Electrochem. Soc.

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“…The control of the nitride thickness was long realized to be a major limitation in the performance of MNOS memory arrays [11] as electric field strengths in the silicon nitride were required to be below 5.5 MV/cm. to extend the endurance to erase/write cycling beyond 10 cycles.…”

Section: Physical Electronics Of Sonos Devicesmentioning

confidence: 99%

A low voltage SONOS nonvolatile semiconductor memory technology

White

Yang

Purwar³

et al. 1997

IEEE Trans. Comp., Packag., Manufact. Technol. A

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110

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The triple-dielectric polysilicon-blocking oxidesilicon nitride-tunnel oxide-silicon (SONOS) structure is an attractive candidate for high density E 2 PROM's suitable for semiconductor disks and as a replacement for high-density dynamic random access memories (DRAM's). Low programming voltages (5 V) and high endurance (greater than 10 7 cycles) are possible in this multidielectric technology as the intermediate Si 3 N 4 layer is scaled to thicknesses of 50Å. The thin gate insulator and low programming voltage enable the scaling of the basic memory cell and associated complementary metal-oxide-semiconductor (CMOS) peripheral circuitry on the memory chip. A SONOS 1TC memory cell is proposed in a NOR architecture with a cell area of 6F 2 , where F is the technology feature size. A 0.20 m feature size permits a 1TC area of 0.24 m 2 for advanced 1-Gb nonvolatile semiconductor memory chips. A physical model is presented to characterize the erase/write, retention and endurance properties of the nonvolatile semiconductor memory (NVSM) SONOS device.

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“…This treatment consists of exposing the native silicon surface to a gas mixture of HC1 and N~ at 750~ before subseiquent processing of the MNOS structure. It has recently been shown that this treatment may not provide devices with long-term endurance and retention properties (2). However, studying the mechanism of timezero improvement brought about by HC1 treatment is valuable.…”

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confidence: 99%