Energy barriers at the interfaces in the MIS system Me-Yb2O3-Si

Rozhkov, V. A.; Trusova, A. Yu.

doi:10.1134/1.1259310

Cited by 5 publications

(2 citation statements)

References 3 publications

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“…The onset of energy loss features is estimated as the intersection of the linear extrapolation of the loss feature with the linear background of the O 1s line-shape. In spite of the experimental noise and experimental resolution, a band gap of 5.2 ± 0.2 eV can be estimated, in reasonable agreement with values reported in literature [34,44]. Taking into account the Si band gap of 1.1 eV, a conduction band offset (CBO) of about 1.7 eV is obtained, which is sufficiently high to act as a barrier for electron injection across the interface.…”

Section: Valence Bandsupporting

confidence: 88%

Atomic and electronic structure of ultrathin fluoride barrier layers at the oxide/Si interface

Pasquali¹,

Montecchi²,

Nannarone³

et al. 2011

J. Phys.: Condens. Matter

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A SrF(2) ultrathin barrier layer on Si(001) is used to form a sharp interface and block reactivity and intermixing between the semiconductor and a Yb(2)O(3) overlayer. Yb(2)O(3)/Si(001) and Yb(2)O(3)/SrF(2)/Si(001) interfaces grown in ultra high vacuum by molecular beam epitaxy are studied by photoemission and x-ray absorption fine structure. Without the fluoride interlayer, Yb(2)O(3)/Si(001) presents an interface reacted region formed by SiO(x) and/or silicate compounds, which is about 9 Å thick and increases up to 14-15 Å after annealing at 500-700 °C. A uniform single layer of SrF(2) molecules blocks intermixing and reduces the oxidized Si region to 2.4 Å after deposition and to 3.5 Å after annealing at 500 °C. In both cases we estimate a conduction band offset and a valence band offset of ∼ 1.7 eV and 2.4 eV between the oxide and Si, respectively. X-ray absorption fine structure measurements at the Yb L(III) edge suggest that the Yb oxide films exhibit a significant degree of static disorder with and without the fluoride barrier. Sr K edge measurements indicate that the ultrathin fluoride films are reacted, with the formation of bonds between Si and Sr; the Sr-Sr and Sr-F interatomic distances in the ultrathin fluoride barrier film are relaxed to the bulk value.

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Section: Valence Bandsupporting

confidence: 88%

Atomic and electronic structure of ultrathin fluoride barrier layers at the oxide/Si interface

Pasquali¹,

Montecchi²,

Nannarone³

et al. 2011

J. Phys.: Condens. Matter

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“…Rare‐earth (RE) oxide films possess properties such as high mechanical durability, thermal stability, radiation resistance, high dielectric constant ( ε = 14−30) and very small leakage current density, refractive indexes of about 2, high transparency over a wide spectral range (between 0.22 and 2 µm), and variable electrical conductivity in different gaseous fluids. These properties justify their application as insulators in microelectronics, having a number of advantages over silica, HfO 2 , and ZrO 2 , as gas detectors, as luminophores, and in optical electronics . Tb is one of the RE metals, possesses an oxidation number from +3 to +4, and forms oxides according to the general formula R n O 2 n ‐2 m (R = Ce, Pr, Tb), depending on the procedure conditions .…”

Section: Introductionmentioning

confidence: 99%

MOCVD Synthesis of Terbium Oxide Films and their Optical Properties

Belaya

Баковец

Asanov

et al. 2015

Chemical Vapor Deposition

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Terbium oxide films are deposited on silicon substrates by metal-organic (MO)CVD from a vapor of Tb(thd) 3 in argon. Terbium sesquioxide (C-form) is realized in this process. Annealing of the films in air at 800°C, followed by cooling in air, leads to the formation of Tb 4 O 7 . The Ar ion-etching of the annealed films causes a reduction of Tb 4þ to Tb 3þ . Optical E g is estimated, photoluminescence spectra are investigated, and refractive indexes and dielectric constants are measured for terbium oxide films before and after annealing in air.

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Scientific and Technological Issues Related to Rare Earth Oxides: An Introduction

Scarel¹,

Svane

Fanciulli³

Topics in Applied Physics

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Energy barriers at the interfaces in the MIS system Me-Yb2O3-Si

Cited by 5 publications

References 3 publications

Atomic and electronic structure of ultrathin fluoride barrier layers at the oxide/Si interface

Atomic and electronic structure of ultrathin fluoride barrier layers at the oxide/Si interface

MOCVD Synthesis of Terbium Oxide Films and their Optical Properties

Scientific and Technological Issues Related to Rare Earth Oxides: An Introduction

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