Energy Cost Analysis of Membrane Distributed-Reflector Lasers for On-Chip Optical Interconnects

Hiratani, Takuo; Shindo, Takahiko; Doi, Kyohei; Atsuji, Yuki; Inoue, Daisuke; Amemiya, Tomohiro; Nishiyama, Nobuhiko; Arai, Shigehisa

doi:10.1109/jstqe.2015.2456334

Cited by 16 publications

(8 citation statements)

References 45 publications

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“…Here, the energy cost for data transmission under the conditions of 10 Gb/s operation, corresponding to a 3 dB bandwidth of 7.7 GHz, and a light output power of 0.16 mW, which is required for on-chip light sources [22], [49], was estimated for various index-coupling coefficients κ i as shown in Fig. 3.…”

Section: Design and Fabricationmentioning

confidence: 99%

“…In order to estimate the operating energy, it was assumed that the resistance of the p-InP is dominant. The p-InP resistivity of 0.035 Ωcm and a distance between the p-electrode and active region of 1.2 μm were used [49]. The result shows that the low energy cost operation of less than 100 fJ/bit can be expected for the short cavity structure with a DFB section length of less than 50 μm.…”

Section: Design and Fabricationmentioning

confidence: 99%

“…The DR structure, which improves the light output efficiency [44]- [47], was introduced, and an asymmetric light output characteristic with the ratio from the front to the rear sides of 6.7 was achieved [48]. Energy cost analysis of the membrane DR lasers was also carried out, and a suitable cavity structure was pro- posed in terms of the energy cost [49]. Furthermore, although a membrane DR laser integrated with a spot size converter for data center use was reported [50], [51], further reduction of threshold current is required for on-chip light sources.…”

Section: Introductionmentioning

confidence: 99%

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High-Efficiency Operation of Membrane Distributed-Reflector Lasers on Silicon Substrate

Hiratani¹,

Inoue²,

Tomiyasu³

et al. 2017

IEEE J. Select. Topics Quantum Electron.

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To advance on-chip optical interconnections, membrane distributed-reflector (DR) lasers with low threshold current and high-efficiency operation at one side output were realized. First, a membrane distributed Bragg reflector (DBR) laser with 80-µm-long active section and 50-µm-long DBR section was fabricated to clarify the DBR reflectivity. An external differential quantum efficiency of 35% for the output from the front facet was obtained, and the DBR reflectivity was estimated to be 75%. Next, a membrane DR laser with 61-µm-long distributed feedback section and 50-µm-long DBR section was fabricated. A threshold current of 0.48 mA, external differential quantum efficiency from the front side waveguide of 26%, and light output ratio from the front to the rear sides of 13 were obtained. The lasing spectrum showed a single-mode operation with a side-mode suppression-ratio (SMSR) of 40 dB. Finally, small-signal direct modulation was carried out and a modulation current efficiency factor of 7.9 GHz/mA 1/2 and 7 GHz/mA 1/2 were, respectively, obtained for the 30-µm-long and 61-µm-long devices.

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Section: Design and Fabricationmentioning

confidence: 99%

Section: Design and Fabricationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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High-Efficiency Operation of Membrane Distributed-Reflector Lasers on Silicon Substrate

Hiratani¹,

Inoue²,

Tomiyasu³

et al. 2017

IEEE J. Select. Topics Quantum Electron.

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“…A large refractive-index difference between the core and cladding layers results in strong grating index-coupling [33]. These properties make the membrane DFB laser a candidate for use as a low-power consumption light source [34]. In our early works, optically pumped operation has revealed low-threshold and strong index-coupled characteristics [35]- [37].…”

Section: Introductionmentioning

confidence: 99%

Integrated Optical Link on Si Substrate Using Membrane Distributed-Feedback Laser and p-i-n Photodiode

Inoue¹,

Hiratani²,

Fukuda³

et al. 2017

IEEE J. Select. Topics Quantum Electron.

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On-chip optical interconnection is a promising technology for wiring future large-scale integrated circuits, as a means to mitigate the considerable power dissipation of traditional wiring layers. Here, we fabricate an integrated optical link using a membrane distributed-feedback (DFB) laser and a p-i-n photodiode (PD) in a butt-jointed built-in coupling geometry. The optical link is formed on a Si substrate by benzocyclobutene bonding. The integrated DFB laser shows a low-threshold current of 0.48 mA. Light transmission between the DFB laser and the p-i-n PD is confirmed with static measurements of the optical link. The optical link has a 3-dB bandwidth of 11.3 GHz at a 2.73 mA DFB laser bias current and a -3 V p-i-n PD bias voltage. A data transmission experiment of the optical link is performed, using a nonreturn to zero, pseudorandom-bit-sequence with a word length of 2 31 -1 signals. With a DFB laser bias current of 2.5 mA, 10 Gbit/s data transmission with a bit-error-rate of 6 × 10 -7 is successfully achieved.

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“…The dissipation power P diss was defined by the difference between the input power P in and the light output power P o , and the heat sources of P diss -RI 2 for 5QWs and RI 2 for p-InP were assumed. Here, the assumption that the resistance of the p-InP side cladding region is dominant in the total device resistance 24) was used.…”

mentioning

confidence: 99%

90 °C continuous-wave operation of GaInAsP/InP membrane distributed-reflector laser on Si substrate

Hiratani

Inoue

Tomiyasu

et al. 2017

Appl. Phys. Express

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The temperature dependence of a GaInAsP/InP membrane distributed-reflector laser bonded on a Si substrate — which showed a low threshold current (0.29 mA) and a relatively high differential quantum efficiency (23% from the front side) at 20 °C — was measured. A characteristic temperature of the threshold current, T0, of 84 K and a sub-mA threshold current operation up to 90 °C were obtained under a continuous-wave (CW) condition. Furthermore, single-mode operation up to 80 °C was also obtained.

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Energy Cost Analysis of Membrane Distributed-Reflector Lasers for On-Chip Optical Interconnects

Cited by 16 publications

References 45 publications

High-Efficiency Operation of Membrane Distributed-Reflector Lasers on Silicon Substrate

High-Efficiency Operation of Membrane Distributed-Reflector Lasers on Silicon Substrate

Integrated Optical Link on Si Substrate Using Membrane Distributed-Feedback Laser and p-i-n Photodiode

90 °C continuous-wave operation of GaInAsP/InP membrane distributed-reflector laser on Si substrate

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