Energy relaxation of InN thin films

Jang, Der-Jun; Lin, G.-T.; Wu, Chien‐Liang; Hsiao, Ching‐Lien; Tu, Li; Lee, M.-E.

doi:10.1063/1.2773947

Cited by 28 publications

(20 citation statements)

References 15 publications

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“…Table 2 summarizes the material parameters of wurtzite InN used in the simulations. The model of InN yields the electron-optical phonon emission time t e ¼ 29 fs for the photon energy of 1.53 eV and at a temperature of 35 K. This value of t e is in agreement with the experimental value t e ¼ 23-31 fs [14] obtained at the same conditions and at small carrier concentration at which the hot phonon effects are weak.…”

Section: Model Of Innsupporting

confidence: 80%

High field electron and hole transport in wurtzite InN

Reklaitis

2012

Physica Status Solidi (b)

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A Monte Carlo technique has been used to investigate the steady‐state, transient, and small‐signal transport of electrons and holes in InN in high electric fields. The drift velocities and diffusion coefficients of electrons and holes are calculated using single‐particle Monte Carlo method. The transient drift velocities of electrons and holes are evaluated from ensemble Monte Carlo simulations. The electron small‐signal mobility is estimated. The threshold frequency of 550 GHz for the negative differential mobility (NDM) in InN is obtained.

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Section: Model Of Innsupporting

confidence: 80%

High field electron and hole transport in wurtzite InN

Reklaitis

2012

Physica Status Solidi (b)

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“…Jang et al proposed the suppression of electron energy relaxation by a hot phonon effect and denied the possibility of Coulomb screening of the LO phonon interaction. 89) On the other hand, Su et al attributed the dependence of the relaxation rate on the carrier density to the screening effect, 90) and Tsai et al ascribed it to the hot electron effect. 91) Yang et al proposed the contribution of piezoelectronic coupling to acoustic phonons.…”

Section: ¹1mentioning

confidence: 99%

Carrier dynamics and related electronic band properties of InN films

Ishitani

2014

Jpn. J. Appl. Phys.

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In the present article, we focus our discussion on the carrier dynamics of the scattering and recombination processes of InN films and the related band-edge energy structure. Various reports on this matter are summarized and some issues are reexamined. The analysis result based on the apparent band-band transition matrix element is consistent with a reported effective heavy hole mass of 0.59 (+0.06) m 0 . An E p value related to the transition matrix element of 10-14 eV is thought to be plausible. The ambiguity of the band-edge structure is evaluated by the uncertainty of electron density. The distortion of the conduction band bottom and the ambiguity of the estimation of the many-body effect are discussed. The enhancement of the anisotropic electron-scattering nature with the decrease in residual electron density reveals that the residual electron source has isotropic potentials: point defects or small complexes. Infrared reflectance spectrum analysis reveals the high electron mobility inside grains in spite of the scattering by edge-type dislocations which cause the anisotropic carrier scattering. The recombination processes at low temperatures are dominated by nonradiative processes related to edge-type dislocations, while the thermally activated nonradiative recombination process is independent of the dislocation density. The activation processes and energies of the recombination related to phonon localization are characterized. InN is a peculiar material that has high carrier mobility and a strong electron-phonon interaction, which possibly induces the high nonradiative carrier recombination rate. The control of phonon localization is thus required.

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“…Much studies on the physical and optical properties of this alloy have been reported. However, carrier dynamics and the related material characteristics such as the recombination lifetime and the carrier thermalization have been reported for InN only [5,6]. In this paper, we investigate the optical properties of InGaN epilayers with different gallium fractions using time-resolved photoluminescence (TRPL) and report the hot carrier relaxation characteristics for In 0.83 Ga 0.17 N layer.…”

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confidence: 97%

Hot carrier relaxation process in InGaN epilayers

Lagarde

Carrère

Chassaing

et al. 2011

Physica Status Solidi (b)

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InGaN epilayers with gallium fractions ranging between 0 and 0.48 have been studied by time-resolved photoluminescence. Layers containing low gallium fractions are associated with low PL emission intensity. For In 0.83 Ga 0.17 N layer, the luminescence decay is 100 times faster in the high energy part of the photoluminescence spectrum than on the low energy part, reflecting the hot carrier recombination process. This is confirmed by the significant blue shift of the photoluminescence spectra for short decay times compared to the time integrated spectrum. It takes about 10 ps for the carriers to reach an equilibrium temperature of 100 K.

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Energy relaxation of InN thin films

Cited by 28 publications

References 15 publications

High field electron and hole transport in wurtzite InN

High field electron and hole transport in wurtzite InN

Carrier dynamics and related electronic band properties of InN films

Hot carrier relaxation process in InGaN epilayers

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