Engineering the Electron–Hole Bilayer Tunneling Field-Effect Transistor

Agarwal, Sapan; Teherani, James T.; Hoyt, Judy L.; Antoniadis, D.A.; Yablonovitch, Eli

doi:10.1109/ted.2014.2312939

Cited by 55 publications

(40 citation statements)

References 25 publications

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“…Several in-plane tunneling transistors based on 2D and 1D semiconductors, such as carbon nanotubes, 16 bilayer graphene, 17 graphene nanoribbons, 18 and so forth, have been studied. However, interlayer tunneling devices, which require tunneling in the vertical direction of 2D crystals, are still in their early stages and need further in-depth studies to obtain band structure parameters and tunneling probability along their outof-plane direction to assess their suitability for high performance tunneling transistors.…”

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confidence: 99%

Transport Properties of a MoS₂/WSe₂ Heterojunction Transistor and Its Potential for Application

et al. 2016

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confidence: 99%

Transport Properties of a MoS₂/WSe₂ Heterojunction Transistor and Its Potential for Application

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“…A similar suggestion pointing to the direction of minimizing electron quantum capacitance while maximizing hole quantum capacitance was done in Ref. 19.…”

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confidence: 55%

Assessment of pseudo-bilayer structures in the heterogate germanium electron-hole bilayer tunnel field-effect transistor

Padilla

Alper

Medina-Bailón

et al. 2015

Applied Physics Letters

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We investigate the effect of pseudo-bilayer configurations at low operating voltages (≤0.5 V) in the heterogate germanium electron-hole bilayer tunnel field-effect transistor (HG-EHBTFET) compared to the traditional bilayer structures of EHBTFETs arising from semiclassical simulations where the inversion layers for electrons and holes featured very symmetric profiles with similar concentration levels at the ON-state. Pseudo-bilayer layouts are attained by inducing a certain asymmetry between the top and the bottom gates so that even though the hole inversion layer is formed at the bottom of the channel, the top gate voltage remains below the required value to trigger the formation of the inversion layer for electrons. Resulting benefits from this setup are improved electrostatic control on the channel, enhanced gate-to-gate efficiency, and higher ION levels. Furthermore, pseudo-bilayer configurations alleviate the difficulties derived from confining very high opposite carrier concentrations in very thin structures.

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“…For example, the step function of the DOS in two-dimensional (2D) systems leads us to expect steeper switching than in the corresponding three-dimensional (3D) case. [33][34][35] This is also valid in one-dimensional (1D) systems. Thus, low-dimensional systems like 2D semiconductors or nanowires have an advantage in terms of SS in addition to electrostatic control, as expected in MOSFETs.…”

Section: Overview Of State-of-the-art Tfet Researchmentioning

confidence: 98%

Material engineering for silicon tunnel field-effect transistors: isoelectronic trap technology

2017

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The tunnel field-effect transistor (TFET) is one of the candidates replacing conventional metal-oxide-semiconductor field-effect transistors to realize low-power-consumption large-scale integration (LSI). The most significant issue in the practical application of TFETs concerns their low tunneling current. Si is an indirect-gap material having a low band-to-band tunneling probability and is not favored for the channel. However, a new technology to enhance tunneling current in Si-TFETs utilizing the isoelectronic trap (IET) technology was recently proposed. IET technology provides a new approach to realize low-power-consumption LSIs with TFETs. The present paper reviews the state-of-the-art research and future prospects of Si-TFETs with IET technology.

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Engineering the Electron–Hole Bilayer Tunneling Field-Effect Transistor

Abstract: Abstract-The electron-hole (EH) Bilayer

Cited by 55 publications

References 25 publications

Transport Properties of a MoS₂/WSe₂ Heterojunction Transistor and Its Potential for Application

Transport Properties of a MoS₂/WSe₂ Heterojunction Transistor and Its Potential for Application

Assessment of pseudo-bilayer structures in the heterogate germanium electron-hole bilayer tunnel field-effect transistor

Material engineering for silicon tunnel field-effect transistors: isoelectronic trap technology

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Engineering the Electron–Hole Bilayer Tunneling Field-Effect Transistor

Abstract: Abstract-The electron-hole (EH) Bilayer

Cited by 55 publications

References 25 publications

Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application

Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application

Assessment of pseudo-bilayer structures in the heterogate germanium electron-hole bilayer tunnel field-effect transistor

Material engineering for silicon tunnel field-effect transistors: isoelectronic trap technology

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Transport Properties of a MoS₂/WSe₂ Heterojunction Transistor and Its Potential for Application

Transport Properties of a MoS₂/WSe₂ Heterojunction Transistor and Its Potential for Application